IPD50P04P4L11ATMA2 vs IPB120P04P4L03ATMA2 Comparison
Detailed side-by-side comparison of IPD50P04P4L11ATMA2 by Infineon and IPB120P04P4L03ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB120P04P4L03ATMA2 - 40V P-Channel MOSFET, 120A, D2PAK | Infineon
IPB120P04P4L03ATMA2 ✓ ActiveSpecification Comparison
| Parameter | IPD50P04P4L11ATMA2 | IPB120P04P4L03ATMA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Transistor Type | P-Channel MOSFET, enhancement mode | — |
| Drain-Source Voltage VDS | -40 V | — |
| Continuous Drain Current ID (TC = 25 °C) | -50 A | — |
| On-State Resistance RDS(on) (VGS = -10 V) | 10.6 mΩ typical | — |
| Gate-Source Voltage VGS (max) | ±20 V | — |
| Gate Threshold Voltage VGS(th) | -1.0 V to -2.5 V typical | — |
| Typical Gate Charge Qg | 45 nC | — |
| Power Dissipation PD (TC = 25 °C) | 58 W | — |
| Operating Junction Temperature | -55 °C to +175 °C | -55C to +175C |
| Package | PG-TO252-3-313 (DPAK), surface mount | PG-TO263-3-2 (D2PAK) |
| Pin Count | 3 (Drain / Tab / Source / Gate) | 3 (Gate, Drain, Source) |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | — |
| RoHS Compliance | Compliant | — |
| MSL Level | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| Transistor Polarity | — | P-Channel |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tc=25C) | — | 120 A |
| Power Dissipation (PD, Tc=25C) | — | 136 W |
| On-Resistance (RDS(on)) | — | 3.1 mΩ (typ, per Infineon summary) |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/range] |
| Technology Family | — | OptiMOS-P2 |
| Configuration | — | Single P-Channel MOSFET |
| RoHS Status | — | Compliant (per Infineon product page) |