IPD60R145CFD7ATMA1 vs IPD60R210PFD7SAUMA1 Vergleich

Detaillierter Direktvergleich von IPD60R145CFD7ATMA1 von Infineon und IPD60R210PFD7SAUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IPD60R145CFD7ATMA1 IPD60R210PFD7SAUMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,05 $0,54
FET Type N-Channel —
Technology CoolMOS CFD7 (superjunction) Superjunction (CoolMOS) N-Channel Power MOSFET
Drain-Source Voltage (V<sub>DS</sub>) 600 V —
Continuous Drain Current (I<sub>D</sub>) 16 A (T<sub>C</sub> = 25C) —
On-Resistance R<sub>DS(on)</sub> max 145 mOhm —
Power Dissipation (P<sub>D</sub>) 83 W (T<sub>C</sub> = 25C) —
Gate Threshold Voltage V<sub>GS(th)</sub> [DATA_NEEDED: Vth typical/min/max] —
Gehäuse TO-252AA (DPAK) surface mount —
Body Diode Integrated fast body diode (low Q<sub>rr</sub>) —
Betriebstemperatur -55C to +150C (junction) —
Montageart Surface Mount (DPAK, 3-pin + tab) Surface Mount (SMT)
Pin-Anzahl 3 (Gate, Drain, Source) —
Series CoolMOS CFD7 —
MSL-Level [DATA_NEEDED: MSL rating] —
RoHS-Status Compliant —
Target Application ZVS / LLC resonant converters, soft switching —
Manufacturer — Infineon Technologies
Product Family — CoolMOS PFD7
Drain-Source Voltage (VDS) — 600 V
Continuous Drain Current (ID, Tc) — 16 A
On-Resistance (RDS(on), max) — 210 mOhm
Power Dissipation (Ptot, Tc=25C) — 64 W
Gate Threshold Voltage (VGS(th), typ) — 3.5 V
Gate Charge (Qg, typ) — [DATA_NEEDED: Qg value]
Package Type — TO-252 (DPAK)
Manufacturer Package Designator — PG-TO252-3-344
Pin Configuration — 3-Pin (2+Tab) - Gate, Drain (tab), Source
Betriebstemperaturbereich — -55C to +150C (TJ)
Lead-Free / RoHS — Yes (compliant)
Application Segment — Consumer-grade SMPS

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