IPD60R210PFD7SAUMA1 vs IPD60R145CFD7ATMA1 Vergleich

Detaillierter Direktvergleich von IPD60R210PFD7SAUMA1 von Infineon und IPD60R145CFD7ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IPD60R210PFD7SAUMA1 IPD60R145CFD7ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,54 $1,05
Manufacturer Infineon Technologies —
Product Family CoolMOS PFD7 —
Technology Superjunction (CoolMOS) N-Channel Power MOSFET CoolMOS CFD7 (superjunction)
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID, Tc) 16 A —
On-Resistance (RDS(on), max) 210 mOhm —
Power Dissipation (Ptot, Tc=25C) 64 W —
Gate Threshold Voltage (VGS(th), typ) 3.5 V —
Gate Charge (Qg, typ) [DATA_NEEDED: Qg value] —
Package Type TO-252 (DPAK) —
Manufacturer Package Designator PG-TO252-3-344 —
Montageart Surface Mount (SMT) Surface Mount (DPAK, 3-pin + tab)
Pin Configuration 3-Pin (2+Tab) - Gate, Drain (tab), Source —
Betriebstemperaturbereich -55C to +150C (TJ) —
Lead-Free / RoHS Yes (compliant) —
Application Segment Consumer-grade SMPS —
FET Type — N-Channel
Drain-Source Voltage (V<sub>DS</sub>) — 600 V
Continuous Drain Current (I<sub>D</sub>) — 16 A (T<sub>C</sub> = 25C)
On-Resistance R<sub>DS(on)</sub> max — 145 mOhm
Power Dissipation (P<sub>D</sub>) — 83 W (T<sub>C</sub> = 25C)
Gate Threshold Voltage V<sub>GS(th)</sub> — [DATA_NEEDED: Vth typical/min/max]
Gehäuse — TO-252AA (DPAK) surface mount
Body Diode — Integrated fast body diode (low Q<sub>rr</sub>)
Betriebstemperatur — -55C to +150C (junction)
Pin-Anzahl — 3 (Gate, Drain, Source)
Series — CoolMOS CFD7
MSL-Level — [DATA_NEEDED: MSL rating]
RoHS-Status — Compliant
Target Application — ZVS / LLC resonant converters, soft switching

Datenblätter & Ressourcen

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