IPD60R380C6ATMA1 vs IPD60R385CPATMA1 Vergleich

Detaillierter Direktvergleich von IPD60R380C6ATMA1 von Infineon und IPD60R385CPATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IPD60R380C6ATMA1 IPD60R385CPATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,41 $0,42
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID) at TC=25C 10.6 A —
Pulsed Drain Current (ID,pulse) [DATA_NEEDED: pulsed drain current] —
Static Drain-Source On-Resistance RDS(on) max @ VGS=10V 380 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: gate-source voltage max] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] [DATA_NEEDED: VGS(th)]
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Power Dissipation (PD) at TC=25C 83 W —
Operating Junction Temperature (TJ) -55C to +150C —
Storage Temperature [DATA_NEEDED: storage temperature] —
Technology CoolMOS C6 Superjunction —
FET Type N-Channel N-Channel
Gehäuse PG-TO252-3 (DPAK) —
Montageart Surface Mount Surface Mount
MSL-Level [DATA_NEEDED: MSL level] 1 (per JEDEC J-STD-020)
RoHS-Status Compliant Compliant
Drain-Tab Connection Exposed pad (electrically connected to drain) —
Manufacturer — Infineon Technologies
Series — CoolMOS™ CP (5th generation)
Drain-Source Voltage (V(BR)DSS) — 600 V
Drain-Source On-Resistance (RDS(on)) — 385 mΩ (typ, VGS = 10 V)
Continuous Drain Current (ID) at TC=25°C — 9 A
Pulsed Drain Current (IDM) — 27 A
Power Dissipation (PD) at TC=25°C — 83 W
Gate Charge (Qg) — 18 nC (typ)
Reverse Recovery Charge (Qrr) — [DATA_NEEDED: Qrr]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Betriebs-Sperrschichttemperatur — -55 °C to +150 °C
Gehäuse / Bauform — PG-TO252-3 (DPAK)
Pin-Anzahl — 3 (Gate, Drain, Source; tab = Drain)

Datenblätter & Ressourcen

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