IPD60R380C6ATMA1 vs IPD60R385CPATMA1 对比
详细并排对比 IPD60R380C6ATMA1 出自 Infineon 和 IPD60R385CPATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPD60R380C6ATMA1 | IPD60R385CPATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.41 | $0.42 |
| Drain-Source Voltage (VDS) | 600 V | — |
| Continuous Drain Current (ID) at TC=25C | 10.6 A | — |
| Pulsed Drain Current (ID,pulse) | [DATA_NEEDED: pulsed drain current] | — |
| Static Drain-Source On-Resistance RDS(on) max @ VGS=10V | 380 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: gate-source voltage max] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | [DATA_NEEDED: VGS(th)] |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (PD) at TC=25C | 83 W | — |
| Operating Junction Temperature (TJ) | -55C to +150C | — |
| Storage Temperature | [DATA_NEEDED: storage temperature] | — |
| Technology | CoolMOS C6 Superjunction | — |
| FET Type | N-Channel | N-Channel |
| 封装 | PG-TO252-3 (DPAK) | — |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | [DATA_NEEDED: MSL level] | 1 (per JEDEC J-STD-020) |
| RoHS 状态 | Compliant | Compliant |
| Drain-Tab Connection | Exposed pad (electrically connected to drain) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | CoolMOS™ CP (5th generation) |
| Drain-Source Voltage (V(BR)DSS) | — | 600 V |
| Drain-Source On-Resistance (RDS(on)) | — | 385 mΩ (typ, VGS = 10 V) |
| Continuous Drain Current (ID) at TC=25°C | — | 9 A |
| Pulsed Drain Current (IDM) | — | 27 A |
| Power Dissipation (PD) at TC=25°C | — | 83 W |
| Gate Charge (Qg) | — | 18 nC (typ) |
| Reverse Recovery Charge (Qrr) | — | [DATA_NEEDED: Qrr] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| 工作结温 | — | -55 °C to +150 °C |
| 封装 / 外壳 | — | PG-TO252-3 (DPAK) |
| 引脚数量 | — | 3 (Gate, Drain, Source; tab = Drain) |