IPD70N10S312ATMA1 vs IPD35N10S3L26ATMA2 Vergleich
Detaillierter Direktvergleich von IPD70N10S312ATMA1 von Infineon und IPD35N10S3L26ATMA2 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPD70N10S312ATMA1 | IPD35N10S3L26ATMA2 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,92 | $1,05 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies |
| Part Number | IPD70N10S312ATMA1 | — |
| Product Family | OptiMOS-T Power-Transistor | OptiMOS-T |
| FET Type | N-Channel, Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID, Tc) | 70 A | 35 A |
| Pulsed Drain Current (IDM) | 180 A | — |
| Power Dissipation (PD, Tc) | 125 W | — |
| On-State Resistance (RDS(on)) | 11.1 mΩ @ 70 A, 10 V VGS | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Input Capacitance (Ciss) | 4355 pF @ 25 V | — |
| Total Gate Charge (Qg) | 65 nC @ 10 V | — |
| Operating Temperature (TJ) | -55 °C to +175 °C | — |
| Gehäuse | PG-TO252-3-11 (DPAK, 2 Leads + Tab) | PG-TO252-3-11 (DPAK) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | MSL1 (up to 260 °C peak reflow) | [DATA_NEEDED: MSL rating] |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| Avalanche Tested | 100 % (per datasheet) | — |
| RoHS Compliance | Green product, RoHS compliant | — |
| Transistortyp | — | N-Channel MOSFET |
| On-Resistance R<sub>DS(on)</sub> max | — | 24 mOhm |
| Power Dissipation (Ptot, Tc) | — | 71 W |
| Gate Threshold V<sub>GS(th)</sub> | — | [DATA_NEEDED: gate threshold typical/range] |
| Betriebstemperaturbereich | — | [DATA_NEEDED: Tj min/max] |
| Pin-Anzahl | — | 3 (Drain, Source, Gate + tab) |
| Technology | — | Trench MOSFET (OptiMOS-T) |
| RoHS-Status | — | Compliant |
| Lead-Free | — | Yes |