IPD70N10S312ATMA1 vs IPD60R280P7SAUMA1 Vergleich

Detaillierter Direktvergleich von IPD70N10S312ATMA1 von Infineon und IPD60R280P7SAUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IPD70N10S312ATMA1 IPD60R280P7SAUMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,92 $0,48
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IPD70N10S312ATMA1 —
Product Family OptiMOS-T Power-Transistor —
FET Type N-Channel, Enhancement Mode —
Drain-Source Voltage (VDS) 100 V 600 V
Continuous Drain Current (ID, Tc) 70 A 12 A
Pulsed Drain Current (IDM) 180 A [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD, Tc) 125 W —
On-State Resistance (RDS(on)) 11.1 mΩ @ 70 A, 10 V VGS —
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] 4 V max @ ID = 190 µA
Input Capacitance (Ciss) 4355 pF @ 25 V —
Total Gate Charge (Qg) 65 nC @ 10 V —
Operating Temperature (TJ) -55 °C to +175 °C —
Gehäuse PG-TO252-3-11 (DPAK, 2 Leads + Tab) PG-TO252-3 (DPAK)
Montageart Surface Mount Surface Mount
MSL-Level MSL1 (up to 260 °C peak reflow) 1
Automotive Qualification AEC-Q101 —
Avalanche Tested 100 % (per datasheet) —
RoHS Compliance Green product, RoHS compliant —
Static Drain-Source On-Resistance (RDS(on)) — 280 mΩ (typical)
Gate-Source Voltage (VGS) Max — ±20 V
Total Power Dissipation (Ptot, Tc) — 53 W
Operating Junction Temperature (TJ) — -40 °C to +150 °C
Technology — CoolMOS P7 Superjunction (SJ) N-channel
Series — CoolMOS P7 (7th generation, 600 V)
RoHS-Status — Compliant
Integrated ESD Protection — Yes

Datenblätter & Ressourcen

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