IPD70R1K4P7SAUMA1 vs IPN70R1K4P7SATMA1 Vergleich
Detaillierter Direktvergleich von IPD70R1K4P7SAUMA1 von Infineon und IPN70R1K4P7SATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPD70R1K4P7SAUMA1 | IPN70R1K4P7SATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,52 | $0,48 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | CoolMOS P7 (700V Superjunction) | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 700 V | — |
| Continuous Drain Current (ID) at Tc=25C | 4 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V, ID | 1.4 ohm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Power Dissipation (Ptot) at Tc=25C | 23 W | — |
| Betriebs-Sperrschichttemperatur | -55C to +150C | — |
| Gehäuse | PG-TO252-3 (DPAK) | PG-SOT223 (3-pin + tab, surface mount) |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 3 (Gate, Drain, Source) | 3 (Gate, Drain, Source) |
| Technology | Superjunction (CoolMOS P7) | Superjunction (CoolMOS P7) |
| Avalanche Energy Rated | Yes (100% avalanche tested) | — |
| ESD Protection | Integrated (per datasheet) | — |
| RoHS-Status | Compliant | Compliant |
| Product Series | — | CoolMOS P7 |
| Transistortyp | — | N-Channel MOSFET |
| Drain-Source Voltage (V(BR)DSS) | — | 700 V |
| Continuous Drain Current (ID) at TC | — | 4 A |
| Static Drain-Source On-Resistance (RDS(on)) | — | 1.4 ohm class (per '1K4' suffix) |
| Total Power Dissipation (PD) at TC | — | 6.2 W |
| Betriebstemperaturbereich | — | -55C to +150C (TJ) |
| Configuration | — | Single with built-in diode |
| DPAK Footprint Compatible | — | Yes (drop-in alternative to DPAK per datasheet) |
| MSL-Level | — | 1 (per JEDEC J-STD-020) |