IPD80R2K4P7ATMA1 vs IPD80R600P7ATMA1 Vergleich
Detaillierter Direktvergleich von IPD80R2K4P7ATMA1 von Infineon und IPD80R600P7ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPD80R2K4P7ATMA1 - 800V CoolMOS P7 2.5A N-Channel MOSFET | Infineon
IPD80R2K4P7ATMA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | IPD80R2K4P7ATMA1 | IPD80R600P7ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,05 | $0,92 |
| Part Number | IPD80R2K4P7ATMA1 | — |
| Manufacturer | Infineon Technologies | — |
| Series | CoolMOS P7 | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide), Superjunction | CoolMOS P7 super-junction |
| Drain-to-Source Voltage (Vdss) | 800 V | — |
| Continuous Drain Current (Id) @ Tc=25C | 2.5 A | — |
| Power Dissipation (Pd) @ Tc=25C | 22 W | — |
| On-Resistance RDS(on) Max @ VGS=10V | 2000 mOhm | — |
| Gate Drive Voltage (typ) | 10 V | — |
| Gehäuse | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) |
| Montageart | Surface Mount | Surface Mount |
| Pins | 3 (2 + Tab) | — |
| Configuration | Single | — |
| Betriebstemperaturbereich | -55C to +150C (junction) | -55 C to +150 C |
| Part Status | Active | — |
| Drain-Source Voltage (VDS) | — | 800 V |
| Continuous Drain Current (ID, Tc) | — | 8 A |
| Pulsed Drain Current (IDM) | — | 22 A |
| On-Resistance (RDS(on), max) | — | 600 mΩ at VGS=10V |
| Maximum Power Dissipation (Ptot) | — | 60 W (Tc) |
| Gate Threshold Voltage (VGS(th)) | — | 3 V (typical) |
| Maximum Gate-Source Voltage (VGS) | — | ±30 V |
| Avalanche Energy, Single Pulse (EAS) | — | 20 mJ |
| Avalanche Energy, Repetitive (EAR) | — | 0.17 mJ |
| Polarity | — | N-Channel |
| MSL-Level | — | 1 (per JEDEC J-STD-020) |