IPD80R2K4P7ATMA1 vs IPD80R600P7ATMA1 Comparison
Detailed side-by-side comparison of IPD80R2K4P7ATMA1 by Infineon and IPD80R600P7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD80R2K4P7ATMA1 - 800V CoolMOS P7 2.5A N-Channel MOSFET | Infineon
IPD80R2K4P7ATMA1 β Active
Specification Comparison
| Parameter | IPD80R2K4P7ATMA1 | IPD80R600P7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.05 | $0.92 |
| Part Number | IPD80R2K4P7ATMA1 | β |
| Manufacturer | Infineon Technologies | β |
| Series | CoolMOS P7 | β |
| FET Type | N-Channel | β |
| Technology | MOSFET (Metal Oxide), Superjunction | CoolMOS P7 super-junction |
| Drain-to-Source Voltage (Vdss) | 800 V | β |
| Continuous Drain Current (Id) @ Tc=25C | 2.5 A | β |
| Power Dissipation (Pd) @ Tc=25C | 22 W | β |
| On-Resistance RDS(on) Max @ VGS=10V | 2000 mOhm | β |
| Gate Drive Voltage (typ) | 10 V | β |
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Pins | 3 (2 + Tab) | β |
| Configuration | Single | β |
| Operating Temperature Range | -55C to +150C (junction) | -55 C to +150 C |
| Part Status | Active | β |
| Drain-Source Voltage (VDS) | β | 800 V |
| Continuous Drain Current (ID, Tc) | β | 8 A |
| Pulsed Drain Current (IDM) | β | 22 A |
| On-Resistance (RDS(on), max) | β | 600 mΞ© at VGS=10V |
| Maximum Power Dissipation (Ptot) | β | 60 W (Tc) |
| Gate Threshold Voltage (VGS(th)) | β | 3 V (typical) |
| Maximum Gate-Source Voltage (VGS) | β | Β±30 V |
| Avalanche Energy, Single Pulse (EAS) | β | 20 mJ |
| Avalanche Energy, Repetitive (EAR) | β | 0.17 mJ |
| Polarity | β | N-Channel |
| MSL Level | β | 1 (per JEDEC J-STD-020) |