IPD80R600P7ATMA1 vs IPD60R600C6ATMA1 Vergleich
Detaillierter Direktvergleich von IPD80R600P7ATMA1 von Infineon und IPD60R600C6ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPD80R600P7ATMA1 | IPD60R600C6ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,92 | $0,92 |
| Drain-Source Voltage (VDS) | 800 V | 600 V |
| Continuous Drain Current (ID, Tc) | 8 A | — |
| Pulsed Drain Current (IDM) | 22 A | [DATA_NEEDED: IDM] |
| On-Resistance (RDS(on), max) | 600 mΩ at VGS=10V | — |
| Maximum Power Dissipation (Ptot) | 60 W (Tc) | — |
| Gate Threshold Voltage (VGS(th)) | 3 V (typical) | [DATA_NEEDED: VGS(th)] |
| Maximum Gate-Source Voltage (VGS) | ±30 V | — |
| Avalanche Energy, Single Pulse (EAS) | 20 mJ | — |
| Avalanche Energy, Repetitive (EAR) | 0.17 mJ | — |
| Betriebstemperaturbereich | -55 C to +150 C | -55 °C to +150 °C |
| Gehäuse | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) |
| Montageart | Surface Mount | Surface Mount |
| Technology | CoolMOS P7 super-junction | CoolMOS C6 (Superjunction) |
| Polarity | N-Channel | — |
| MSL-Level | 1 (per JEDEC J-STD-020) | 1 |
| Manufacturer | — | Infineon Technologies |
| Series | — | CoolMOS C6 |
| Part Suffix | — | ATMA1 (Tape & Reel) |
| Transistortyp | — | N-Channel MOSFET |
| Gate-Source Voltage (VGS) Max | — | ±20 V |
| Continuous Drain Current (ID) at TC=25°C | — | 7.3 A |
| Continuous Drain Current (ID) at TC=100°C | — | [DATA_NEEDED: ID at TC=100°C] |
| On-Resistance RDS(on) Max at VGS=10V | — | 600 mΩ |
| Total Power Dissipation (Ptot) at TC=25°C | — | 63 W |
| Anzahl der Pins | — | 3 (Gate, Drain, Source) |
| RoHS-Status | — | Compliant |