IPD90N04S403ATMA1 vs IPC90N04S5L3R3ATMA1 Vergleich

Detaillierter Direktvergleich von IPD90N04S403ATMA1 von Infineon und IPC90N04S5L3R3ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IPD90N04S403ATMA1 IPC90N04S5L3R3ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,05 $0,96
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-T2 OptiMOS 5 40V
Channel Type N-Channel —
Drain-Source Voltage (V_DS) 40 V —
Continuous Drain Current (I_D, Tc) 90 A —
On-State Resistance (R_DS(on)) 3.2 mOhm typical at V_GS = 10 V —
Maximum Power Dissipation (P_D, Tc=25C) 94 W —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: gate threshold voltage] —
Gehäuse PG-TO252-3-313 (DPAK) PG-TDSON-8-34 (TDSON-8)
Montageart Surface Mount Surface Mount
Betriebs-Sperrschichttemperatur -55C to +175C -55°C to +175°C
MSL-Level MSL1 (peak reflow up to 260C) —
AEC-Q101 Qualification Qualified (automotive grade) —
Avalanche Tested 100% avalanche-tested 100% (production-level)
RoHS Compliance Compliant (Green Package) Compliant (Green Product)
Technology Trench MOSFET (OptiMOS-T2) —
FET Type — N-Channel, Enhancement Mode
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at TC=25°C — 90 A
On-Resistance RDS(on) max at VGS=10V — 3.3 mΩ
On-Resistance RDS(on) at VGS=4.5V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage VGS(th) — 1.7 V to 2.7 V (logic level)
Total Power Dissipation (TC=25°C) — 62 W
Storage Temperature Range — [DATA_NEEDED: storage temp range]
MSL Moisture Sensitivity — MSL1 (per JEDEC J-STD-020)
Peak Reflow Temperature — 260°C
Qualification — AEC-Q101 automotive qualified

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