IPD90N04S403ATMA1 vs IPC90N04S5L3R3ATMA1 비교

다음의 상세 나란히 비교: IPD90N04S403ATMA1 제조: Infineon 및 IPC90N04S5L3R3ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IPD90N04S403ATMA1 IPC90N04S5L3R3ATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.05 $0.96
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-T2 OptiMOS 5 40V
Channel Type N-Channel —
Drain-Source Voltage (V_DS) 40 V —
Continuous Drain Current (I_D, Tc) 90 A —
On-State Resistance (R_DS(on)) 3.2 mOhm typical at V_GS = 10 V —
Maximum Power Dissipation (P_D, Tc=25C) 94 W —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: gate threshold voltage] —
패키지 PG-TO252-3-313 (DPAK) PG-TDSON-8-34 (TDSON-8)
실장 유형 Surface Mount Surface Mount
동작 접합 온도 -55C to +175C -55°C to +175°C
MSL 레벨 MSL1 (peak reflow up to 260C) —
AEC-Q101 Qualification Qualified (automotive grade) —
Avalanche Tested 100% avalanche-tested 100% (production-level)
RoHS Compliance Compliant (Green Package) Compliant (Green Product)
Technology Trench MOSFET (OptiMOS-T2) —
FET Type — N-Channel, Enhancement Mode
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at TC=25°C — 90 A
On-Resistance RDS(on) max at VGS=10V — 3.3 mΩ
On-Resistance RDS(on) at VGS=4.5V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage VGS(th) — 1.7 V to 2.7 V (logic level)
Total Power Dissipation (TC=25°C) — 62 W
Storage Temperature Range — [DATA_NEEDED: storage temp range]
MSL Moisture Sensitivity — MSL1 (per JEDEC J-STD-020)
Peak Reflow Temperature — 260°C
Qualification — AEC-Q101 automotive qualified

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