IPD90N10S406ATMA1 vs IPD50N06S409ATMA2 Vergleich
Detaillierter Direktvergleich von IPD90N10S406ATMA1 von Infineon und IPD50N06S409ATMA2 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPD90N10S406ATMA1 | IPD50N06S409ATMA2 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,72 | $0,49 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPD90N10S406ATMA1 | — |
| Family / Series | OptiMOS | — |
| Transistortyp | N-Channel MOSFET, Enhancement Mode | — |
| Drain-Source Voltage (Vds) | 100 V | — |
| Continuous Drain Current (Id) @ Tc=25°C | 90 A | — |
| Power Dissipation (Pd) @ Tc=25°C | 136 W | — |
| Gate Drive Level | Normal Level (10 V typical Vgs) | — |
| Avalanche Energy Rating (EAS) | 250 mJ | — |
| Betriebs-Sperrschichttemperatur | -55 °C to +175 °C | -55 °C to +175 °C |
| Storage Temperature Range | -55 °C to +175 °C | — |
| Gehäuse / Bauform | PG-TO252-3-313 (DPAK) | — |
| Montageart | Surface Mount | Surface Mount |
| Anzahl der Pins | 3 (Gate, Drain, Source) | — |
| MSL-Level | MSL1 (260 °C peak reflow) | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| RoHS Compliance | Green Product (RoHS compliant) | — |
| Built-in Body Diode | Yes (single with built-in diode) | — |
| Avalanche Tested | 100% Avalanche tested | — |
| Packaging | Tape & Reel (Cut Tape / Reel options available) | — |
| Technology | — | N-Channel MOSFET (OptiMOS) |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at Tc | — | 50 A |
| On-Resistance R<sub>DS(on)</sub> max at VGS=10V | — | 9 mΩ |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Power Dissipation (Pd) at Tc | — | 71 W |
| Gehäuse | — | PG-TO252-3-11 (DPAK) |
| Pin-Anzahl | — | 3 (2 + Tab) |
| RoHS-Status | — | Compliant |
| Lead-Free / Halogen-Free | — | [DATA_NEEDED] |