IPD90N10S406ATMA1 vs IPD50N06S409ATMA2 Comparación
Comparación detallada lado a lado de IPD90N10S406ATMA1 por Infineon y IPD50N06S409ATMA2 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IPD90N10S406ATMA1 | IPD50N06S409ATMA2 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,72 | $0,49 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPD90N10S406ATMA1 | — |
| Family / Series | OptiMOS | — |
| Tipo de transistor | N-Channel MOSFET, Enhancement Mode | — |
| Drain-Source Voltage (Vds) | 100 V | — |
| Continuous Drain Current (Id) @ Tc=25°C | 90 A | — |
| Power Dissipation (Pd) @ Tc=25°C | 136 W | — |
| Gate Drive Level | Normal Level (10 V typical Vgs) | — |
| Avalanche Energy Rating (EAS) | 250 mJ | — |
| Temperatura de unión de funcionamiento | -55 °C to +175 °C | -55 °C to +175 °C |
| Storage Temperature Range | -55 °C to +175 °C | — |
| Encapsulado / Carcasa | PG-TO252-3-313 (DPAK) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Número de pines | 3 (Gate, Drain, Source) | — |
| Nivel MSL | MSL1 (260 °C peak reflow) | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| RoHS Compliance | Green Product (RoHS compliant) | — |
| Built-in Body Diode | Yes (single with built-in diode) | — |
| Avalanche Tested | 100% Avalanche tested | — |
| Packaging | Tape & Reel (Cut Tape / Reel options available) | — |
| Technology | — | N-Channel MOSFET (OptiMOS) |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at Tc | — | 50 A |
| On-Resistance R<sub>DS(on)</sub> max at VGS=10V | — | 9 mΩ |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Power Dissipation (Pd) at Tc | — | 71 W |
| Encapsulado | — | PG-TO252-3-11 (DPAK) |
| Recuento de pines | — | 3 (2 + Tab) |
| Estado RoHS | — | Compliant |
| Lead-Free / Halogen-Free | — | [DATA_NEEDED] |