IPD90N10S406ATMA1 vs IPD65R380E6ATMA1 Vergleich
Detaillierter Direktvergleich von IPD90N10S406ATMA1 von Infineon und IPD65R380E6ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPD90N10S406ATMA1 | IPD65R380E6ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,72 | $0,65 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPD90N10S406ATMA1 | — |
| Family / Series | OptiMOS | — |
| Transistortyp | N-Channel MOSFET, Enhancement Mode | N-Channel MOSFET |
| Drain-Source Voltage (Vds) | 100 V | — |
| Continuous Drain Current (Id) @ Tc=25°C | 90 A | — |
| Power Dissipation (Pd) @ Tc=25°C | 136 W | — |
| Gate Drive Level | Normal Level (10 V typical Vgs) | — |
| Avalanche Energy Rating (EAS) | 250 mJ | — |
| Betriebs-Sperrschichttemperatur | -55 °C to +175 °C | — |
| Storage Temperature Range | -55 °C to +175 °C | — |
| Gehäuse / Bauform | PG-TO252-3-313 (DPAK) | — |
| Montageart | Surface Mount | Surface Mount |
| Anzahl der Pins | 3 (Gate, Drain, Source) | — |
| MSL-Level | MSL1 (260 °C peak reflow) | 1 |
| Automotive Qualification | AEC-Q101 qualified | — |
| RoHS Compliance | Green Product (RoHS compliant) | — |
| Built-in Body Diode | Yes (single with built-in diode) | — |
| Avalanche Tested | 100% Avalanche tested | — |
| Packaging | Tape & Reel (Cut Tape / Reel options available) | — |
| Series | — | CoolMOS™ E6 |
| Technology | — | Superjunction (CoolMOS™) |
| Drain-Source Voltage (V_DS) | — | 650 V |
| Continuous Drain Current (I_D) at T_C | — | 10.6 A |
| R_DS(on) max at V_GS=10V | — | 380 mΩ |
| R_DS(on) test conditions | — | 3.2 A, 10 V |
| Gate-Source Voltage (V_GS) max | — | ±20 V |
| Gate Threshold Voltage (V_GS(th)) | — | 3.5 V typ |
| Gate Charge (Q_G) | — | 39 nC at 10 V |
| Input Capacitance (C_iss) | — | 710 pF at 100 V |
| Power Dissipation (P_D) at T_C | — | 83 W |
| Betriebstemperaturbereich | — | -55 °C to +150 °C |
| Gehäuse | — | PG-TO252-3 (DPAK), surface mount |
| RoHS-Status | — | Compliant |