IPD90P04P405ATMA2 vs IPD50P04P413ATMA2 Vergleich

Detaillierter Direktvergleich von IPD90P04P405ATMA2 von Infineon und IPD50P04P413ATMA2 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IPD90P04P405ATMA2 IPD50P04P413ATMA2
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,69 $0,42
Polarity P-Channel —
Drain-Source Voltage (VDS) -40 V -40 V
Continuous Drain Current (ID, Tc) -90 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed IDM]
Power Dissipation (PD, Tc) 125 W —
On-Resistance RDS(on) at VGS = -10 V 4.7 mΩ (typical) —
Gate-Source Voltage (VGS) max ±20 V ±20 V
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) range] [DATA_NEEDED: VGS(th)]
Total Gate Charge (Qg) [DATA_NEEDED: Qg total] —
Betriebstemperaturbereich -55 °C to +175 °C (Tj) -55 °C to +175 °C
Gehäuse PG-TO252-3-313 (DPAK, surface mount) PG-TO252-3-313 (DPAK)
Montageart Surface Mount Surface Mount
Pin-Anzahl 3 (Gate, Drain, Source) —
Process Technology OptiMOS-P2 (trench + field plate) —
MSL-Level 1 (per JEDEC J-STD-020) 1
RoHS-Status Compliant Compliant
Polarity / Device Type — P-Channel MOSFET
Technology — OptiMOS-P2 (Trench)
Continuous Drain Current (TC=25°C, ID) — 50 A
Continuous Drain Current (TC=100°C, ID) — [DATA_NEEDED: ID @ 100°C]
Power Dissipation (TC=25°C, Ptot) — 58 W
On-State Resistance (RDS(on)) @ VGS=-10V — 9.2 mΩ (typ) / 12.6 mΩ (max)
On-State Resistance (RDS(on)) @ VGS=-4.5V — [DATA_NEEDED: RDS(on) @ VGS=-4.5V]
Maximum Junction Temperature (TJ,max) — 175 °C
Standard Pack Quantity (13" reel) — 2500 pcs
Automotive Qualification — AEC-Q101 qualified

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