IPD90P04P405ATMA2 vs IPD50P04P413ATMA2 Comparison

Detailed side-by-side comparison of IPD90P04P405ATMA2 by Infineon and IPD50P04P413ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPD90P04P405ATMA2 IPD50P04P413ATMA2
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.69 $0.42
Polarity P-Channel
Drain-Source Voltage (VDS) -40 V -40 V
Continuous Drain Current (ID, Tc) -90 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed IDM]
Power Dissipation (PD, Tc) 125 W
On-Resistance RDS(on) at VGS = -10 V 4.7 mΩ (typical)
Gate-Source Voltage (VGS) max ±20 V ±20 V
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) range] [DATA_NEEDED: VGS(th)]
Total Gate Charge (Qg) [DATA_NEEDED: Qg total]
Operating Temperature Range -55 °C to +175 °C (Tj) -55 °C to +175 °C
Package PG-TO252-3-313 (DPAK, surface mount) PG-TO252-3-313 (DPAK)
Mounting Type Surface Mount Surface Mount
Pin Count 3 (Gate, Drain, Source)
Process Technology OptiMOS-P2 (trench + field plate)
MSL Level 1 (per JEDEC J-STD-020) 1
RoHS Status Compliant Compliant
Polarity / Device Type P-Channel MOSFET
Technology OptiMOS-P2 (Trench)
Continuous Drain Current (TC=25°C, ID) 50 A
Continuous Drain Current (TC=100°C, ID) [DATA_NEEDED: ID @ 100°C]
Power Dissipation (TC=25°C, Ptot) 58 W
On-State Resistance (RDS(on)) @ VGS=-10V 9.2 mΩ (typ) / 12.6 mΩ (max)
On-State Resistance (RDS(on)) @ VGS=-4.5V [DATA_NEEDED: RDS(on) @ VGS=-4.5V]
Maximum Junction Temperature (TJ,max) 175 °C
Standard Pack Quantity (13" reel) 2500 pcs
Automotive Qualification AEC-Q101 qualified

Datasheets & Resources

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