IPD90P04P4L04ATMA2 vs IPD50P04P413ATMA2 Vergleich

Detaillierter Direktvergleich von IPD90P04P4L04ATMA2 von Infineon und IPD50P04P413ATMA2 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IPD90P04P4L04ATMA2 IPD50P04P413ATMA2
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,22 $0,42
Part Number IPD90P04P4L04ATMA2 —
Manufacturer Infineon Technologies —
Family OptiMOS-P2 —
Channel Type P-Channel —
Drain-Source Voltage (Vds) -40 V —
Continuous Drain Current (Id) at Tc=25C -90 A —
Power Dissipation (Pd) at Tc=25C 125 W —
On-State Resistance Rds(on) typ at Vgs=-10V 4.3 mOhm —
Gate Threshold Voltage Vgs(th) typ [DATA_NEEDED: Vgs(th) typical value] —
Maximum Junction Temperature 175 C —
Betriebstemperaturbereich -55 C to +175 C -55 °C to +175 °C
Gehäuse PG-TO252-3-313 (DPAK) PG-TO252-3-313 (DPAK)
Montageart Surface Mount Surface Mount
Anzahl der Pins 3 (2 + Tab) —
Automotive Qualification AEC-Q101 qualified AEC-Q101 qualified
RoHS-Status Compliant Compliant
MSL-Level [DATA_NEEDED: MSL rating] 1
Polarity / Device Type — P-Channel MOSFET
Technology — OptiMOS-P2 (Trench)
Drain-Source Voltage (VDS) — -40 V
Continuous Drain Current (TC=25°C, ID) — 50 A
Continuous Drain Current (TC=100°C, ID) — [DATA_NEEDED: ID @ 100°C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed IDM]
Power Dissipation (TC=25°C, Ptot) — 58 W
On-State Resistance (RDS(on)) @ VGS=-10V — 9.2 mΩ (typ) / 12.6 mΩ (max)
On-State Resistance (RDS(on)) @ VGS=-4.5V — [DATA_NEEDED: RDS(on) @ VGS=-4.5V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th)]
Gate-Source Voltage (VGS) max — ±20 V
Maximum Junction Temperature (TJ,max) — 175 °C
Standard Pack Quantity (13" reel) — 2500 pcs

Datenblätter & Ressourcen

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