IPD90P04P4L04ATMA2 vs IPD50P04P413ATMA2 Comparaison
Comparaison détaillée côte à côte de IPD90P04P4L04ATMA2 par Infineon et IPD50P04P413ATMA2 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IPD90P04P4L04ATMA2 | IPD50P04P413ATMA2 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,22 | $0,42 |
| Part Number | IPD90P04P4L04ATMA2 | — |
| Manufacturer | Infineon Technologies | — |
| Family | OptiMOS-P2 | — |
| Channel Type | P-Channel | — |
| Drain-Source Voltage (Vds) | -40 V | — |
| Continuous Drain Current (Id) at Tc=25C | -90 A | — |
| Power Dissipation (Pd) at Tc=25C | 125 W | — |
| On-State Resistance Rds(on) typ at Vgs=-10V | 4.3 mOhm | — |
| Gate Threshold Voltage Vgs(th) typ | [DATA_NEEDED: Vgs(th) typical value] | — |
| Maximum Junction Temperature | 175 C | — |
| Plage de température de fonctionnement | -55 C to +175 C | -55 °C to +175 °C |
| Boîtier | PG-TO252-3-313 (DPAK) | PG-TO252-3-313 (DPAK) |
| Type de montage | Surface Mount | Surface Mount |
| Nombre de broches | 3 (2 + Tab) | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| Statut RoHS | Compliant | Compliant |
| Niveau MSL | [DATA_NEEDED: MSL rating] | 1 |
| Polarity / Device Type | — | P-Channel MOSFET |
| Technology | — | OptiMOS-P2 (Trench) |
| Drain-Source Voltage (VDS) | — | -40 V |
| Continuous Drain Current (TC=25°C, ID) | — | 50 A |
| Continuous Drain Current (TC=100°C, ID) | — | [DATA_NEEDED: ID @ 100°C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed IDM] |
| Power Dissipation (TC=25°C, Ptot) | — | 58 W |
| On-State Resistance (RDS(on)) @ VGS=-10V | — | 9.2 mΩ (typ) / 12.6 mΩ (max) |
| On-State Resistance (RDS(on)) @ VGS=-4.5V | — | [DATA_NEEDED: RDS(on) @ VGS=-4.5V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Maximum Junction Temperature (TJ,max) | — | 175 °C |
| Standard Pack Quantity (13" reel) | — | 2500 pcs |