IPG16N10S461AATMA1 vs BSC0906NSATMA1 Vergleich
Detaillierter Direktvergleich von IPG16N10S461AATMA1 von Infineon und BSC0906NSATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPG16N10S461AATMA1 | BSC0906NSATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,82 | $0,48 |
| Manufacturer | Infineon Technologies | — |
| Product Type | Dual N-Channel MOSFET Array | — |
| Technology | OptiMOS™ trench | OptiMOS |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) | 16 A | — |
| On-Resistance R_DS(on) typ. | 61 mΩ | — |
| Total Power Dissipation (Ptot) | 29 W (T_C = 25°C) | — |
| Configuration | 2 N-Channel (Dual, separate) | — |
| Gate Threshold Voltage V_GS(th) typ. | [DATA_NEEDED: gate threshold voltage] | — |
| Maximum Junction Temperature | 175 °C | — |
| Betriebstemperaturbereich | -55 °C to +175 °C | -55C to +150C (junction, typical) |
| Gehäuse | PG-TDSON-8-10 (Wettable Flank) | PG-TDSON-8-6 (SuperSO8, 5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| Terminal Count | 8 | — |
| MSL-Level | [DATA_NEEDED: MSL rating] | — |
| RoHS-Status | Compliant | Compliant |
| Built-in Body Diode | Yes | — |
| Channel Mode | Enhancement | — |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at Ta | — | 18 A |
| Continuous Drain Current (ID) at Tc | — | 63 A |
| Power Dissipation at Ta | — | 2.5 W |
| Power Dissipation at Tc | — | 30 W |
| RDS(on) max (typical reference) | — | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg @ VGS=10V] |
| Pin-Anzahl | — | 8 |