IPG20N04S4L11ATMA1 vs IPG16N10S461AATMA1 Vergleich
Detaillierter Direktvergleich von IPG20N04S4L11ATMA1 von Infineon und IPG16N10S461AATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPG20N04S4L11ATMA1 - 40V 20A Dual N-Ch OptiMOS MOSFET | Infineon
IPG20N04S4L11ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IPG20N04S4L11ATMA1 | IPG16N10S461AATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,39 | $0,82 |
| FET Type | 2 N-Channel (Dual) | — |
| FET Feature | Logic Level Gate | — |
| Drain-to-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) @ 25C | 20 A per channel | — |
| R<sub>DS(on)</sub> Max @ VGS=10V, ID=17A | 11.6 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Maximum Power Dissipation (PD) | 41 W | — |
| Betriebstemperaturbereich | -55C to +175C | -55 °C to +175 °C |
| Gehäuse | PG-TDSON-8-4 (Super S08 / 8-TDSON EP) | PG-TDSON-8-10 (Wettable Flank) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 1 (260C peak reflow) | [DATA_NEEDED: MSL rating] |
| Avalanche Rating | 100% Avalanche Tested | — |
| Automotive Qualification | AEC-Q101 Qualified | — |
| RoHS-Status | Compliant (Green Product) | Compliant |
| Technology | OptiMOS-T2 trench | OptiMOS™ trench |
| Manufacturer | — | Infineon Technologies |
| Product Type | — | Dual N-Channel MOSFET Array |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) | — | 16 A |
| On-Resistance R_DS(on) typ. | — | 61 mΩ |
| Total Power Dissipation (Ptot) | — | 29 W (T_C = 25°C) |
| Configuration | — | 2 N-Channel (Dual, separate) |
| Gate Threshold Voltage V_GS(th) typ. | — | [DATA_NEEDED: gate threshold voltage] |
| Maximum Junction Temperature | — | 175 °C |
| Terminal Count | — | 8 |
| Built-in Body Diode | — | Yes |
| Channel Mode | — | Enhancement |