IPG20N04S4L11ATMA1 vs IPG16N10S461AATMA1 Comparación
Comparación detallada lado a lado de IPG20N04S4L11ATMA1 por Infineon y IPG16N10S461AATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPG20N04S4L11ATMA1 - 40V 20A Dual N-Ch OptiMOS MOSFET | Infineon
IPG20N04S4L11ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IPG20N04S4L11ATMA1 | IPG16N10S461AATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,39 | $0,82 |
| FET Type | 2 N-Channel (Dual) | — |
| FET Feature | Logic Level Gate | — |
| Drain-to-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) @ 25C | 20 A per channel | — |
| R<sub>DS(on)</sub> Max @ VGS=10V, ID=17A | 11.6 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Maximum Power Dissipation (PD) | 41 W | — |
| Rango de temperatura de funcionamiento | -55C to +175C | -55 °C to +175 °C |
| Encapsulado | PG-TDSON-8-4 (Super S08 / 8-TDSON EP) | PG-TDSON-8-10 (Wettable Flank) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | 1 (260C peak reflow) | [DATA_NEEDED: MSL rating] |
| Avalanche Rating | 100% Avalanche Tested | — |
| Automotive Qualification | AEC-Q101 Qualified | — |
| Estado RoHS | Compliant (Green Product) | Compliant |
| Technology | OptiMOS-T2 trench | OptiMOS™ trench |
| Manufacturer | — | Infineon Technologies |
| Product Type | — | Dual N-Channel MOSFET Array |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) | — | 16 A |
| On-Resistance R_DS(on) typ. | — | 61 mΩ |
| Total Power Dissipation (Ptot) | — | 29 W (T_C = 25°C) |
| Configuration | — | 2 N-Channel (Dual, separate) |
| Gate Threshold Voltage V_GS(th) typ. | — | [DATA_NEEDED: gate threshold voltage] |
| Maximum Junction Temperature | — | 175 °C |
| Terminal Count | — | 8 |
| Built-in Body Diode | — | Yes |
| Channel Mode | — | Enhancement |