IPG20N06S2L65AATMA1 vs IPG20N10S4L35ATMA1 Vergleich
Detaillierter Direktvergleich von IPG20N06S2L65AATMA1 von Infineon und IPG20N10S4L35ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPG20N06S2L65AATMA1 | IPG20N10S4L35ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,78 | $0,66 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS | OptiMOS™, Automotive |
| FET Type | Dual N-Channel (Half Bridge / Independent) | 2 N-Channel (Dual) |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) | 20 A (per channel) | — |
| Power Dissipation (PD) | 43 W | — |
| Gate Threshold (VGS(th)) | Logic-Level | — |
| Technology | OptiMOS Trench MOSFET | — |
| Gehäuse | PG-TDSON-8-10 (TDSON-8 EP, wettable flank) | — |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | -55 C to +175 C | 175°C max junction |
| AEC-Q101 Qualification | Yes | — |
| MSL-Level | MSL1 (peak reflow 260 C) | MSL1 (up to 260°C peak reflow) |
| RoHS-Status | Compliant (Green Product) | Compliant (Green Product) |
| Avalanche Tested | 100% (per datasheet) | — |
| AOI Compatible | Yes (wettable flank) | — |
| Part Number | — | IPG20N10S4L35ATMA1 |
| FET Feature | — | Logic Level Gate |
| Drain-to-Source Voltage (V<sub>DSS</sub>) | — | 100 V |
| Continuous Drain Current (I<sub>D</sub>) at 25°C | — | 20 A |
| R<sub>DS(on)</sub> Max | — | 35 mΩ @ V<sub>GS</sub>=10 V, I<sub>D</sub>=17 A |
| Gate Threshold (V<sub>GS(th)</sub>) | — | [DATA_NEEDED: typical Vgs(th) value] |
| Power Dissipation (P<sub>D</sub>) | — | 43 W |
| Gehäuse / Bauform | — | PG-TDSON-8-4 (8-Pin TDSON EP) |
| Automotive Qualification | — | AEC-Q101 |
| Avalanche Rated | — | 100% Avalanche Tested |