IPG20N10S436AATMA1 vs IAUC60N04S6L039ATMA1 Vergleich
Detaillierter Direktvergleich von IPG20N10S436AATMA1 von Infineon und IAUC60N04S6L039ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPG20N10S436AATMA1 | IAUC60N04S6L039ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,68 | $0,72 |
| Configuration | Dual N-Channel (2 Elements with Built-in Diode) | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) | 20 A (per channel) | — |
| Total Power Dissipation (PD) | 43 W | — |
| Operating Mode | Enhancement Mode | — |
| Gehäuse | PG-TDSON-8-10 (Wettable Flank) | PG-TDSON-8 (SSO8) 5x6 mm |
| Montageart | Surface Mount | Surface Mount |
| Operating Temperature (TJ max) | +175 C | — |
| JESD-609 Code | e3 | — |
| MSL-Level | MSL1 (260 C peak reflow) | 1 (per JEDEC J-STD-020) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| Avalanche Tested | 100% | — |
| AOI Compatible | Yes (Wettable Flank) | — |
| RoHS-Status | Compliant (Green Product) | Compliant |
| Channel Type | N-Channel Normal Level | — |
| FET Type | — | N-Channel |
| Technology | — | OptiMOS 6 (trench) |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D, T_C=25C) | — | 60 A |
| Pulsed Drain Current (I_DM) | — | 240 A |
| R_DS(on) max @ V_GS=10V | — | 3.9 milliohm |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Q_G) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (P_D) | — | 42 W |
| Betriebs-Sperrschichttemperatur | — | -55C to +175C |
| Avalanche Rated | — | Yes (100% avalanche tested) |