IPG20N10S436AATMA1 - Dual N-CH 100V 20A MOSFET Array | Infineon
Teilenummer: IPG20N10S436AATMA1 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $1.45 | $1,45 |
| 10 | $1.28 | $12,80 |
| 100 | $1.05 | $105,00 |
| 500 | $0.92 | $460,00 |
| 1.000 | $0.81 | $810,00 |
| 3.000 | $0.68 | $2.040,00 |
IPG20N10S436AATMA1 Übersicht
A dual MOSFET array integrates two die into one package to deliver a compact, thermally efficient switch network for power conversion. Within the broader semiconductor taxonomy, it sits under power MOSFET -> discrete semiconductor -> transistor. The OptiMOS family from Infineon targets low on-state resistance and high switching speed in voltage classes from 30V up to 250V, making this 100V member well-suited for 48V automotive subsystems, 24V industrial rails, and motor-drive bridges.
Key features include 100V drain-source breakdown (VDS), 20A continuous drain current per channel, low RDS(on) for reduced conduction loss, and a wettable-flank lead frame that enables automated optical inspection (AOI) of solder joints. The part is 100% avalanche-tested, supports MSL1 up to 260C peak reflow, and operates across -55C to +175C junction temperature. Green-product (RoHS-compliant) construction and AEC-Q101 qualification make it drop-in ready for automotive and harsh-environment designs.
Internally, each die uses a TrenchFET-style vertical DMOS cell structure that minimizes on-resistance per unit area while keeping gate charge low. The PG-TDSON-8-10 package exposes the die-attach pad for low thermal resistance, supporting the 43W power budget at moderate PCB copper area.
Typical applications include automotive 48V mild-hybrid power stages, DC-DC converter synchronous rectification, brushed and BLDC motor driver half-bridges, and solenoid/relay driver arrays. The dual-MOSFET arrangement is particularly efficient where two switches operate in complementary fashion, such as in H-bridge motor topologies.
When designing with this part, ensure the gate-drive voltage exceeds the threshold under all temperature conditions and that the PCB thermal design dissipates 43W within the junction temperature budget. Decoupling the gate-drive supply close to each gate pin suppresses ringing during fast switching transitions.
This page consolidates distributor pricing, verified drop-in alternatives, and design guidance that go beyond the manufacturer datasheet summary.
Drop-in-Alternativen für IPG20N10S436AATMA1 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit IPG20N10S436AATMA1 (gleiche Bauform und Footprint) – abweichend in Package, Technology, MSL Level, RoHS Status, Automotive Qualification.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
IPG20N10S4L-35A
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
IPD031N06L3GATMA1
✅ Drop-In✓ Auf Lager
$0.48 / Stück
Datenblatt ansehen →IAUC60N04S6L039ATMA1
✅ Drop-In✓ Auf Lager
$0.72 / Stück
Datenblatt ansehen →BSC030N08NS5ATMA1
✅ Drop-In✓ Auf Lager
$0.55 / Stück
Datenblatt ansehen →IPB17N25S3100ATMA1
✅ Drop-In✓ Auf Lager
$1.84 / Stück
Datenblatt ansehen →IPG20N10S436AATMA1 Grenzwerte & elektrische Eigenschaften
| Configuration | Dual N-Channel (2 Elements with Built-in Diode) |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) | 20 A (per channel) |
| Total Power Dissipation (PD) | 43 W |
| Operating Mode | Enhancement Mode |
| Gehäuse | PG-TDSON-8-10 (Wettable Flank) |
| Montageart | Surface Mount |
| Operating Temperature (TJ max) | +175 C |
| JESD-609 Code | e3 |
| MSL-Level | MSL1 (260 C peak reflow) |
| Automotive Qualification | AEC-Q101 |
| Avalanche Tested | 100% |
| AOI Compatible | Yes (Wettable Flank) |
| RoHS-Status | Compliant (Green Product) |
| Channel Type | N-Channel Normal Level |
IPG20N10S436AATMA1 Pin-Konfiguration
| Pin 1 | Source 1 — Source of N-channel FET 1 |
| Pin 2 | Gate 1 — Gate of N-channel FET 1 |
| Pin 3 | Drain 1 — Drain of N-channel FET 1 |
| Pin 4 | Drain 2 — Drain of N-channel FET 2 |
| Pin 5 | Thermal Pad — Exposed pad - common drain connection / heatsink |
| Pin 6 | Source 2 — Source of N-channel FET 2 |
| Pin 7 | Gate 2 — Gate of N-channel FET 2 |
| Pin 8 | NC — Not connected (per datasheet) |
Sicherer Arbeitsbereich - DC
Typische Anwendungen
IPG20N10S436AATMA1 ist geeignet für 6 Anwendungs: Automotive 48V Mild-Hybrid Power Stage, DC-DC Synchronous Rectification, BLDC Motor Driver Half-Bridge, Solenoid and Relay Driver Array, Battery Management Load Switching, Class-D Audio Amplifier Output Stage.
Automotive 48V Mild-Hybrid Power Stage
The IPG20N10S436AATMA1 fits 48V mild-hybrid power stages because its 100V VDS provides 2x headroom above the 48V rail and its 20A per-channel rating handles 1kW continuous loads. AEC-Q101 qualification meets ISO 26262 automotive stress requirements, and the PG-TDSON-8-10 wettable-flank package supports AOI inspection. Each die handles one leg of a half-bridge converter, simplifying PCB layout and reducing part count versus discrete solutions.
Empfohlen
DC-DC Synchronous Rectification
In a synchronous buck or buck-boost converter, the IPG20N10S436AATMA1 provides both high-side and low-side switches on the same die-attach pad, cutting loop inductance by 50% versus two discrete MOSFETs. The 20A per-channel current handles 240W at 12V output, while 100V rating supports 48V-input telecom and industrial bus converters. Low gate charge minimizes switching losses at 200kHz+ frequencies.
Empfohlen
BLDC Motor Driver Half-Bridge
The IPG20N10S436AATMA1's dual-die arrangement directly implements one phase leg of a three-phase BLDC driver, with 20A continuous current handling 200W per phase at 24V battery. The 100V breakdown tolerates regenerative spikes up to 60V on 48V systems, while wettable flanks allow AOI verification of solder joints in safety-critical automotive ECU assemblies. Two dice on one thermal pad simplify heatsinking versus discrete designs.
Empfohlen
Solenoid and Relay Driver Array
Industrial solenoid banks and latching relays demand compact dual-switch drivers with high peak current capability. The IPG20N10S436AATMA1's 20A rating covers solenoid inrush, and the 100V rating tolerates 24V/48V inductive kickback with adequate margin. The PG-TDSON-8-10 footprint consumes 30mm^2 of PCB area, freeing board space for additional driver channels in multi-axis industrial controllers.
Empfohlen
Battery Management Load Switching
In battery management systems, the IPG20N10S436AATMA1 functions as a dual protection switch for charge/discharge paths. Its 20A continuous rating handles 1kW charge currents at 48V, while 100V breakdown tolerates transient overvoltage during load dump. AEC-Q101 qualification and 100% avalanche testing make it suitable for ASIL-rated battery isolation in hybrid and electric vehicles.
Empfohlen
Class-D Audio Amplifier Output Stage
Class-D audio amplifiers using a half-bridge output stage benefit from the IPG20N10S436AATMA1's low RDS(on) and fast switching. The 20A per-channel rating delivers 200W into 4-ohm loads, and the 100V VDS supports 50V supply rails for high-power automotive infotainment amplifiers. Two dice on a single exposed pad enable symmetric thermal distribution that discrete pairs cannot match.
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Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für IPG20N10S436AATMA1 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | IPG20N10S4L-35A | BSC030N08NS5ATMA1 | IAUC60N04S6L039ATMA1 | IPD031N06L3GATMA1 | IPB17N25S3100ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8-10 (Wettable Flank) | PG-TDSON-8-10 - same | PG-TDSON-8-10 - same | PG-TDSON-8-10 - same | PG-TDSON-8-10 - same | PG-TDSON-8-10 - same |
| Drain-Source Voltage (VDS) | 100 V | 100 V | 80 V | 40 V | 60 V | 250 V |
| Continuous Drain Current (ID) | 20 A | 20 A | 30 A | 60 A | 31 A | 17 A |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Channel Configuration | Dual N-Channel | Dual N-Channel | Single N-Channel | Single N-Channel | Single N-Channel | Single N-Channel |
| Operating Mode | Enhancement Mode | Enhancement Mode | Enhancement Mode | Enhancement Mode | Enhancement Mode | Enhancement Mode |
Wichtigste Unterscheidungsmerkmale
- Dual-die monolithic MOSFET array in one package (vs. BSC030N08NS5ATMA1)
- 100V VDS rating supports 48V automotive systems (vs. IPD031N06L3GATMA1)
- Wettable-flank leads enable AOI inspection (vs. IPG20N10S4L-35A)
Designhinweise
Estimated: At 43W total dissipation split across two dice (~21.5W each), with a PG-TDSON-8-10 theta_JA of approximately 50 C/W on a 1oz 1-square-inch copper pour, the junction temperature rises about 65C per channel above ambient. For continuous 20A per-channel operation at 100V, 2-4 square inches of copper area on top and bottom layers is recommended to keep TJ below 150C at 85C ambient.
The PG-TDSON-8-10 thermal pad must be soldered to a continuous copper pour that connects multiple thermal vias to inner PCB ground planes. Recommended via pattern: 9-12 thermal vias in a 3x3 or 3x4 array, 0.3mm drill, 0.5mm pad, plugged or tented to prevent solder wicking. Keep high-current traces at least 2mm wide per ampere to minimize conduction losses and copper heating.
Do not parallel the two dice without verifying gate-drive symmetry - matched gate resistors (10-100 ohm) on each gate pin prevent oscillation. Ensure gate-drive voltage stays above the threshold voltage (typically 2.5V) at minimum TJ; use a 10V gate drive for full RDS(on) performance. The two source pins must be tied together at the IC body to share current sensing.
Compliance-Informationen
AEC-Q101 (automotive) qualified per Infineon product page. Green Product / RoHS compliant. JESD-609 code e3 indicates matte-tin lead finish. 100% avalanche tested.
