IPL60R060CFD7AUMA1 vs IPL65R070C7AUMA1 Vergleich
Detaillierter Direktvergleich von IPL60R060CFD7AUMA1 von Infineon und IPL65R070C7AUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPL60R060CFD7AUMA1 | IPL65R070C7AUMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $4,03 | $1,68 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS™ CFD7 | CoolMOS C7 |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (V_DS) | 600 V | — |
| Continuous Drain Current (I_D, Tc) | 40 A | — |
| Power Dissipation (P_D, Tc) | 219 W | — |
| R_DS(on) (max) at V_GS = 10 V | 60 mΩ | — |
| R_DS(on) (typ, datasheet) | 48 mΩ | — |
| Gate Charge (Q_G, typ) at V_GS = 10 V | 79 nC | — |
| Input Capacitance (C_iss) | 3193 pF | — |
| Output Capacitance (C_oss) | 62 pF | — |
| Gate-Source Voltage (V_GS) | ±20 V (max) | — |
| Gate Threshold Voltage (V_GS(th), typ) | 4.5 V | — |
| Betriebstemperaturbereich | -40 °C to +150 °C | — |
| Gehäuse | PG-VSON-4-1 (Surface Mount) | PG-VSON-4 (surface mount) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | [DATA_NEEDED: MSL Level] | [DATA_NEEDED: MSL rating] |
| RoHS-Status | Compliant | Compliant |
| Technology | — | Superjunction N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 650 V |
| Continuous Drain Current (ID) at TC=25°C | — | 28 A |
| Continuous Drain Current (ID) at TC=100°C | — | [DATA_NEEDED: ID at TC=100°C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | — | 70 mΩ (typical) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/range] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Power Dissipation (PD) at TC=25°C | — | 169 W |
| Avalanche Energy (EAS) | — | 171 mJ |
| Betriebs-Sperrschichttemperatur | — | -55°C to +150°C |
| Configuration | — | Single with built-in diode |
| Channel Type | — | N-Channel |
| Lead-Free | — | Yes |