IPL60R060CFD7AUMA1 vs IPL65R070C7AUMA1 Comparaison
Comparaison détaillée côte à côte de IPL60R060CFD7AUMA1 par Infineon et IPL65R070C7AUMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IPL60R060CFD7AUMA1 | IPL65R070C7AUMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $4,03 | $1,68 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS™ CFD7 | CoolMOS C7 |
| Type de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (V_DS) | 600 V | — |
| Continuous Drain Current (I_D, Tc) | 40 A | — |
| Power Dissipation (P_D, Tc) | 219 W | — |
| R_DS(on) (max) at V_GS = 10 V | 60 mΩ | — |
| R_DS(on) (typ, datasheet) | 48 mΩ | — |
| Gate Charge (Q_G, typ) at V_GS = 10 V | 79 nC | — |
| Input Capacitance (C_iss) | 3193 pF | — |
| Output Capacitance (C_oss) | 62 pF | — |
| Gate-Source Voltage (V_GS) | ±20 V (max) | — |
| Gate Threshold Voltage (V_GS(th), typ) | 4.5 V | — |
| Plage de température de fonctionnement | -40 °C to +150 °C | — |
| Boîtier | PG-VSON-4-1 (Surface Mount) | PG-VSON-4 (surface mount) |
| Type de montage | Surface Mount | Surface Mount |
| Niveau MSL | [DATA_NEEDED: MSL Level] | [DATA_NEEDED: MSL rating] |
| Statut RoHS | Compliant | Compliant |
| Technology | — | Superjunction N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 650 V |
| Continuous Drain Current (ID) at TC=25°C | — | 28 A |
| Continuous Drain Current (ID) at TC=100°C | — | [DATA_NEEDED: ID at TC=100°C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | — | 70 mΩ (typical) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/range] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Power Dissipation (PD) at TC=25°C | — | 169 W |
| Avalanche Energy (EAS) | — | 171 mJ |
| Température de jonction en fonctionnement | — | -55°C to +150°C |
| Configuration | — | Single with built-in diode |
| Channel Type | — | N-Channel |
| Lead-Free | — | Yes |