IPN80R1K2P7ATMA1 vs IPN80R1K4P7ATMA1 Vergleich
Detaillierter Direktvergleich von IPN80R1K2P7ATMA1 von Infineon und IPN80R1K4P7ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPN80R1K2P7ATMA1 | IPN80R1K4P7ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,51 | $0,34 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Family / Series | CoolMOS P7 | — |
| Transistortyp | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage VDSS | 800 V | — |
| Continuous Drain Current ID (Tc) | 4.5 A | — |
| Maximum RDS(on) | 1200 mΩ at VGS = 10 V | — |
| Power Dissipation PD (Tc) | 6.8 W | — |
| Gate-Source Voltage VGSS | [DATA_NEEDED: VGSS absolute maximum] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Technology | Superjunction (CoolMOS) | Superjunction (CoolMOS P7) |
| Gehäuse | SOT-223 (3-pin, 2 + tab) | PG-SOT223 (surface mount) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55°C to +150°C (TJ) | -55C to +150C |
| ESD Protection | ESD-protected gate (per CoolMOS P7 family) | — |
| RoHS Compliance | Compliant | — |
| MSL-Level | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| Product Family | — | CoolMOS P7 (500V-950V) |
| Drain-Source Voltage (VDS) | — | 800 V |
| Continuous Drain Current (ID, Tc) | — | 4 A |
| Static Drain-Source On-Resistance (RDS(on) max) | — | 1200 mOhm |
| Power Dissipation (Tc) | — | 7 W |
| Gate-Source Voltage (VGS) | — | ±20 V (max) |
| RoHS-Status | — | Compliant |
| Grade | — | Industrial |