IPN80R1K2P7ATMA1 vs IPN80R1K4P7ATMA1 Comparison
Detailed side-by-side comparison of IPN80R1K2P7ATMA1 by Infineon and IPN80R1K4P7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPN80R1K2P7ATMA1 | IPN80R1K4P7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.51 | $0.34 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Family / Series | CoolMOS P7 | — |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage VDSS | 800 V | — |
| Continuous Drain Current ID (Tc) | 4.5 A | — |
| Maximum RDS(on) | 1200 mΩ at VGS = 10 V | — |
| Power Dissipation PD (Tc) | 6.8 W | — |
| Gate-Source Voltage VGSS | [DATA_NEEDED: VGSS absolute maximum] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Technology | Superjunction (CoolMOS) | Superjunction (CoolMOS P7) |
| Package | SOT-223 (3-pin, 2 + tab) | PG-SOT223 (surface mount) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55°C to +150°C (TJ) | -55C to +150C |
| ESD Protection | ESD-protected gate (per CoolMOS P7 family) | — |
| RoHS Compliance | Compliant | — |
| MSL Level | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| Product Family | — | CoolMOS P7 (500V-950V) |
| Drain-Source Voltage (VDS) | — | 800 V |
| Continuous Drain Current (ID, Tc) | — | 4 A |
| Static Drain-Source On-Resistance (RDS(on) max) | — | 1200 mOhm |
| Power Dissipation (Tc) | — | 7 W |
| Gate-Source Voltage (VGS) | — | ±20 V (max) |
| RoHS Status | — | Compliant |
| Grade | — | Industrial |