IPN80R4K5P7ATMA1 vs IPN60R2K0PFD7SATMA1 Vergleich

Detaillierter Direktvergleich von IPN80R4K5P7ATMA1 von Infineon und IPN60R2K0PFD7SATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
IPN60R2K0PFD7SATMA1 IPN60R2K0PFD7SATMA1 - 600V CoolMOS PFD7 MOSFET | Infineon

IPN60R2K0PFD7SATMA1 - 600V CoolMOS PFD7 MOSFET | Infineon

IPN60R2K0PFD7SATMA1 ✓ Aktiv

Spezifikationsvergleich

Parameter IPN80R4K5P7ATMA1 IPN60R2K0PFD7SATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,30 $0,28
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolMOS P7 —
FET Type N-Channel —
Drain-Source Voltage (VDS) 800 V —
Continuous Drain Current (ID, Tc) 1.5 A —
Power Dissipation (Pd, Tc) 6 W —
On-Resistance (RDS(on), VGS=10V) 4.5 ohm max —
Gehäuse PG-SOT223 (surface mount, 3-pin + tab) PG-SOT223-3-1 (SOT-223)
Montageart Surface Mount Surface Mount
Technology CoolMOS Superjunction (SJ) CoolMOS superjunction
Operating Mode Enhancement-mode —
Grade Industrial —
Application Low-power SMPS, flyback converters, LED drivers —
RoHS-Status Compliant Compliant (per Newark listing)
Reel / Tape Packaging Tape & Reel (T/R) —
Product Series — CoolMOS PFD7
Channel Type — N-Channel
Drain-Source Voltage (V(BR)DSS) — 600 V
Continuous Drain Current (Tc) — 3 A
Power Dissipation (Tc) — 6 W
RDS(on) typical @ VGS=10V — 2.0 Ohm
RDS(on) max @ VGS=10V — 1.626 Ohm (per Infineon product page)
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) — 3.8 nC @ 10 V (per UTMel listing)
Input Capacitance (Ciss) — 134 pF @ 400 V (per UTMel listing)
Betriebstemperaturbereich — [DATA_NEEDED: operating temperature range]
MSL-Level — [DATA_NEEDED: MSL level]

Datenblätter & Ressourcen

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