IPP100N12S305AKSA2 vs IHW40N120R5XKSA1 Vergleich
Detaillierter Direktvergleich von IPP100N12S305AKSA2 von Infineon und IHW40N120R5XKSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPP100N12S305AKSA2 - 120V 100A N-Ch OptiMOS Power MOSFET | Infineon
IPP100N12S305AKSA2 ✓ Aktiv
Spezifikationsvergleich
| Parameter | IPP100N12S305AKSA2 | IHW40N120R5XKSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | IGBTs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $3,78 | $3,50 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 5 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 120 V | — |
| Continuous Drain Current (ID, TC=25C) | 100 A | — |
| Continuous Drain Current (ID, TC=100C) | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Maximum Power Dissipation (PD, TC=25C) | 300 W | — |
| On-State Resistance R_DS(on) max @ VGS=10V | [DATA_NEEDED: R_DS(on) max] | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th)] | — |
| Gate Charge Qg typ @ VGS=10V | [DATA_NEEDED: total gate charge] | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg value] | — |
| Reverse Recovery Charge Qrr | [DATA_NEEDED: Qrr value] | — |
| Betriebstemperaturbereich | -55C to +175C (TJ) | — |
| Gehäuse | PG-TO220-3-1 (Through Hole) | TO-247-3 (PG-TO247-3) through-hole |
| Montageart | Through Hole | Through Hole |
| Pin-Anzahl | 3 (Gate, Drain, Source) | — |
| RoHS-Status | Compliant | — |
| MSL-Level | N/A (Through Hole) | N/A (through-hole) |
| Avalanche Energy Rated | Yes (single-pulse) | — |
| Collector-Emitter Voltage (VCE) | — | 1200 V |
| Continuous Collector Current (IC, TC=25C) | — | 80 A |
| Pulsed Collector Current (ICM) | — | 160 A |
| Maximum Power Dissipation (Ptot) | — | 394 W |
| Gate-Emitter Voltage (VGE) | — | +/-20 V |
| VCE(sat) at IC=40A, VGE=15V, Tj=25C | — | [DATA_NEEDED: typical VCE(sat) value] |
| Integrated Anti-Parallel Diode | — | Yes (monolithic reverse-conducting) |
| Technology | — | Trench Field Stop, Reverse-Conducting RC-H5 |
| Betriebs-Sperrschichttemperatur | — | -40C to +175C |
| Storage Temperature | — | -55C to +150C |
| Soldering Temperature (max 10s) | — | 260 C |
| Switching Application | — | Resonant / soft switching (induction cooking optimized) |
| RoHS Compliance | — | Compliant |
| Halogenfrei | — | Yes |