IPP100N12S305AKSA2 vs IHW40N120R5XKSA1 Сравнение
Подробное сравнение бок о бок IPP100N12S305AKSA2 от Infineon и IHW40N120R5XKSA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IPP100N12S305AKSA2 - 120V 100A N-Ch OptiMOS Power MOSFET | Infineon
IPP100N12S305AKSA2 ✓ Активен
Сравнение характеристик
| Параметр | IPP100N12S305AKSA2 | IHW40N120R5XKSA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | IGBTs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $3,78 | $3,50 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 5 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 120 V | — |
| Continuous Drain Current (ID, TC=25C) | 100 A | — |
| Continuous Drain Current (ID, TC=100C) | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Maximum Power Dissipation (PD, TC=25C) | 300 W | — |
| On-State Resistance R_DS(on) max @ VGS=10V | [DATA_NEEDED: R_DS(on) max] | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th)] | — |
| Gate Charge Qg typ @ VGS=10V | [DATA_NEEDED: total gate charge] | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg value] | — |
| Reverse Recovery Charge Qrr | [DATA_NEEDED: Qrr value] | — |
| Диапазон рабочих температур | -55C to +175C (TJ) | — |
| Корпус | PG-TO220-3-1 (Through Hole) | TO-247-3 (PG-TO247-3) through-hole |
| Тип монтажа | Through Hole | Through Hole |
| Число выводов | 3 (Gate, Drain, Source) | — |
| Статус RoHS | Compliant | — |
| Уровень MSL | N/A (Through Hole) | N/A (through-hole) |
| Avalanche Energy Rated | Yes (single-pulse) | — |
| Collector-Emitter Voltage (VCE) | — | 1200 V |
| Continuous Collector Current (IC, TC=25C) | — | 80 A |
| Pulsed Collector Current (ICM) | — | 160 A |
| Maximum Power Dissipation (Ptot) | — | 394 W |
| Gate-Emitter Voltage (VGE) | — | +/-20 V |
| VCE(sat) at IC=40A, VGE=15V, Tj=25C | — | [DATA_NEEDED: typical VCE(sat) value] |
| Integrated Anti-Parallel Diode | — | Yes (monolithic reverse-conducting) |
| Technology | — | Trench Field Stop, Reverse-Conducting RC-H5 |
| Рабочая температура перехода | — | -40C to +175C |
| Storage Temperature | — | -55C to +150C |
| Soldering Temperature (max 10s) | — | 260 C |
| Switching Application | — | Resonant / soft switching (induction cooking optimized) |
| RoHS Compliance | — | Compliant |
| Без галогенов | — | Yes |