IPP120N08S403AKSA1 vs IRFB3306PBF Vergleich
Detaillierter Direktvergleich von IPP120N08S403AKSA1 von Infineon und IRFB3306PBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPP120N08S403AKSA1 | IRFB3306PBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,15 | $1,05 |
| Drain-to-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID, Tc) | 120 A | — |
| Pulsed Drain Current (bondwire-limited) | 245 A at 25 C | — |
| Maximum Power Dissipation (Ptot) | 278 W (Tc) | — |
| On-State Resistance (RDS(on)) | 2.8 mOhm typical at VGS=10 V, ID=100 A | — |
| Gate Threshold Voltage (VGS(th)) | 4 V max | — |
| Total Gate Charge (Qg) | 167 nC | — |
| Input Capacitance (Ciss) | 11550 pF | — |
| Thermal Resistance, Junction-to-Case (RthJC) | 0.54 K/W | — |
| Betriebs-Sperrschichttemperatur | -55 C to +175 C | -55°C to +175°C |
| Gehäuse | TO-220-3-1 (PG-TO220-3-1) | TO-220AB (through-hole) |
| Montageart | Through Hole | Through Hole |
| MSL-Level | MSL1 (peak reflow up to 260 C) | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Avalanche Rating | 100% avalanche-tested | — |
| RoHS-Status | Compliant (Green Product) | — |
| Channel Type | N-Channel enhancement mode | — |
| Technology Family | OptiMOS | — |
| FET Type | — | N-Channel |
| Technology | — | IR HEXFET (MOSFET) |
| Drain-Source Voltage (Vdss) | — | 60 V |
| Continuous Drain Current (Id) at Tc=25°C | — | 120 A |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (Vgs) max | — | ±20 V |
| Rds(on) max @ Vgs=10V | — | 4.2 mΩ |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) typical value] |
| Total Gate Charge (Qg) typ | — | [DATA_NEEDED: total gate charge Qg] |
| Gate-Drain Charge (Qgd) typ | — | 26 nC (nominal) |
| Power Dissipation (Pd) at Tc=25°C | — | 230 W |
| RoHS / Lead-Free (PbF) | — | Yes (PbF suffix indicates lead-free, RoHS compliant) |
| Avalanche Rated | — | Yes |
| Body Diode | — | Intrinsic (avalanche-rated) |