IPP600N25N3GXKSA1 vs IPP075N15N3GXKSA1 Vergleich

Detaillierter Direktvergleich von IPP600N25N3GXKSA1 von Infineon und IPP075N15N3GXKSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IPP600N25N3GXKSA1 IPP075N15N3GXKSA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,62 $1,92
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 3 —
Part Status Active —
FET Type N-Channel —
Technology MOSFET (Metal Oxide) N-Channel MOSFET (OptiMOS 3)
Drain-to-Source Voltage (VDS) 250 V —
Continuous Drain Current (ID) at Tc=25C 25 A —
Static Drain-to-Source On-Resistance (RDS(on)) max 60 mOhm at VGS=10V —
Power Dissipation (PD) at Tc=25C 136 W —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
Gehäuse / Bauform TO-220-3 (PG-TO220-3-1) —
Montageart Through Hole Through Hole
Betriebstemperaturbereich -55C to +175C (junction) [DATA_NEEDED: junction operating temperature range]
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical value] [DATA_NEEDED: total gate charge]
Reverse Recovery Time (trr) [DATA_NEEDED: trr typical value] —
Lead Free Status Lead Free / RoHS Compliant —
Pin-Anzahl 3 (Gate, Drain, Source) —
Product Family — OptiMOS 3
Drain-Source Voltage (VDS) — 150 V
Continuous Drain Current (ID, Tc=25C) — 100 A
Power Dissipation (PD, Tc=25C) — 300 W
On-State Resistance (RDS(on) max, VGS=10V) — 7.5 mOhm
Gate-Source Voltage (VGS) — [DATA_NEEDED: gate-source voltage absolute max]
Gehäuse — PG-TO220-3 (TO-220 through-hole)
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical]
Lead-Free / RoHS — RoHS Compliant
Ordering Code Suffix — GXKSA1 (Tube pack, RoHS compliant)

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