IPP60R190P6XKSA1 vs IPB60R190C6ATMA1 Vergleich
Detaillierter Direktvergleich von IPP60R190P6XKSA1 von Infineon und IPB60R190C6ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPP60R190P6XKSA1 | IPB60R190C6ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,02 | $1,45 |
| Manufacturer | Infineon Technologies | — |
| Product Family | CoolMOS P6 | — |
| Technology | Superjunction (SJ) MOSFET | CoolMOS C6 Superjunction N-Channel MOSFET |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID) at Tc=25C | 20.2 A | 20.2 A |
| On-Resistance RDS(on) max at 25C | 190 mOhm | — |
| Total Power Dissipation (Ptot) at Tc=25C | 151 W | — |
| Gehäuse | PG-TO220-3 (through-hole) | PG-TO263-3 (D2PAK) |
| Montageart | Through Hole | Surface Mount |
| Gate Drive Voltage (typical) | 10 V | — |
| Betriebstemperaturbereich | -55C to +150C (junction) | -55C to +150C |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| MSL-Level | Not applicable (through-hole) | 1 |
| Product Variant | XKSA1 (industrial grade, tube pack) | — |
| Power Dissipation (PD) at Tc=25C | — | 151 W |
| On-Resistance RDS(on) max at VGS=10V | — | 190 mOhm |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | — | 3.5 V (typ) |
| Total Gate Charge (Qg) typ | — | 32 nC |
| Pin-Anzahl | — | 3 (Gate, Drain, Source) |
| Avalanche Energy Rated | — | Yes (EAS per datasheet) |