IPT017N12NM6ATMA1 vs BSC12DN20NS3GATMA1 Vergleich
Detaillierter Direktvergleich von IPT017N12NM6ATMA1 von Infineon und BSC12DN20NS3GATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
BSC12DN20NS3GATMA1 - 200V 11.3A N-Ch OptiMOS Power MOSFET | Infineon
BSC12DN20NS3GATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IPT017N12NM6ATMA1 | BSC12DN20NS3GATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,85 | $0,61 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPT017N12NM6ATMA1 | — |
| Technology | OptiMOS 6 | OptiMOS power MOSFET |
| Transistortyp | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 120 V | 200 V |
| Continuous Drain Current (ID) at Ta | 29 A | — |
| Continuous Drain Current (ID) at Tc | 331 A | — |
| On-Resistance RDS(on) max | 1.7 mOhm | — |
| Power Dissipation at Ta | 3 W | — |
| Power Dissipation at Tc | 395 W | — |
| Gehäuse | PG-HSOF-8 (TOLL) | PG-TDSON-8-5 |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | -55C to +175C | — |
| Pin-Anzahl | 8 + tab | 8 |
| Packaging | Tape & Reel | — |
| RoHS-Status | Compliant | Compliant |
| Product Family | — | OptiMOS 200V |
| Continuous Drain Current (ID, Tc) | — | 11.3 A |
| Power Dissipation (PD, Tc) | — | 50 W |
| Betriebstemperaturbereich | — | [DATA_NEEDED: operating temperature range] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold typical] |
| On-Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| MSL-Level | — | 1 (per JEDEC J-STD-020) |
| Configuration | — | Single N-channel |