IPT067N20NM6ATMA1 vs IPTG025N15NM6ATMA1 Vergleich

Detaillierter Direktvergleich von IPT067N20NM6ATMA1 von Infineon und IPTG025N15NM6ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IPT067N20NM6ATMA1 IPTG025N15NM6ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $4,85 $1,52
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 6 —
Transistortyp N-Channel MOSFET —
Drain-Source Voltage (VDS) 200 V 150 V
Continuous Drain Current (ID) at TA=25C 15.3 A 26 A
Continuous Drain Current (ID) at TC=25C 137 A 264 A (pulsed)
Power Dissipation (PD) at TA=25C 3.8 W 3.8 W
Power Dissipation (PD) at TC=25C 300 W 395 W
Montageart Surface Mount Surface Mount
Gehäuse PG-HSOF-8-1 (8-pin + exposed tab) PG-HSOG-8-1 (TOLG)
Betriebstemperaturbereich -55C to +150C (junction) -55 C to +175 C (typical for OptiMOS 6)
Technology Trench-gate OptiMOS 6 silicon OptiMOS 6 150 V (N-channel trench)
Gate-Source Voltage (VGS) [DATA_NEEDED: max VGS rating] —
On-Resistance RDS(on) typ [DATA_NEEDED: RDS(on) at VGS=10V] —
Gate Charge (Qg) typ [DATA_NEEDED: total gate charge] —
Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typical value] —
RoHS-Status Compliant Compliant
Lead-Free Yes —
MSL-Level [DATA_NEEDED: MSL moisture sensitivity level] —
Configuration Single N-channel —
Polarity / Channel Type — N-Channel
On-State Resistance RDS(on) typ — 2.5 mOhm at VGS=10 V
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th) value]
Total Gate Charge Qg typ — [DATA_NEEDED: Qg value]
MSL (Moisture Sensitivity Level) — MSL1 (per JEDEC J-STD-020)
Solder Joint Reliability — Excellent - 30% smaller footprint than D2PAK

Datenblätter & Ressourcen

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