IPT067N20NM6ATMA1 vs IPTG025N15NM6ATMA1 비교
다음의 상세 나란히 비교: IPT067N20NM6ATMA1 제조: Infineon 및 IPTG025N15NM6ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IPT067N20NM6ATMA1 | IPTG025N15NM6ATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $4.85 | $1.52 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 | — |
| 트랜지스터 유형 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 200 V | 150 V |
| Continuous Drain Current (ID) at TA=25C | 15.3 A | 26 A |
| Continuous Drain Current (ID) at TC=25C | 137 A | 264 A (pulsed) |
| Power Dissipation (PD) at TA=25C | 3.8 W | 3.8 W |
| Power Dissipation (PD) at TC=25C | 300 W | 395 W |
| 실장 유형 | Surface Mount | Surface Mount |
| 패키지 | PG-HSOF-8-1 (8-pin + exposed tab) | PG-HSOG-8-1 (TOLG) |
| 동작 온도 범위 | -55C to +150C (junction) | -55 C to +175 C (typical for OptiMOS 6) |
| Technology | Trench-gate OptiMOS 6 silicon | OptiMOS 6 150 V (N-channel trench) |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: max VGS rating] | — |
| On-Resistance RDS(on) typ | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Gate Charge (Qg) typ | [DATA_NEEDED: total gate charge] | — |
| Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical value] | — |
| RoHS 상태 | Compliant | Compliant |
| Lead-Free | Yes | — |
| MSL 레벨 | [DATA_NEEDED: MSL moisture sensitivity level] | — |
| Configuration | Single N-channel | — |
| Polarity / Channel Type | — | N-Channel |
| On-State Resistance RDS(on) typ | — | 2.5 mOhm at VGS=10 V |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th) value] |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: Qg value] |
| MSL (Moisture Sensitivity Level) | — | MSL1 (per JEDEC J-STD-020) |
| Solder Joint Reliability | — | Excellent - 30% smaller footprint than D2PAK |