IPT067N20NM6ATMA1 vs ISC058N04NM5ATMA1 Vergleich

Detaillierter Direktvergleich von IPT067N20NM6ATMA1 von Infineon und ISC058N04NM5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IPT067N20NM6ATMA1 ISC058N04NM5ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $4,85 $0,60
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 6 OptiMOS 5 40V Normal Level
Transistortyp N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 200 V 40 V
Continuous Drain Current (ID) at TA=25C 15.3 A —
Continuous Drain Current (ID) at TC=25C 137 A —
Power Dissipation (PD) at TA=25C 3.8 W —
Power Dissipation (PD) at TC=25C 300 W —
Montageart Surface Mount Surface Mount
Gehäuse PG-HSOF-8-1 (8-pin + exposed tab) PG-TDSON-8 FL (SuperSO8 5x6 mm)
Betriebstemperaturbereich -55C to +150C (junction) -55C to +175C
Technology Trench-gate OptiMOS 6 silicon OptiMOS 5 trench MOSFET
Gate-Source Voltage (VGS) [DATA_NEEDED: max VGS rating] —
On-Resistance RDS(on) typ [DATA_NEEDED: RDS(on) at VGS=10V] —
Gate Charge (Qg) typ [DATA_NEEDED: total gate charge] —
Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typical value] —
RoHS-Status Compliant —
Lead-Free Yes —
MSL-Level [DATA_NEEDED: MSL moisture sensitivity level] —
Configuration Single N-channel —
Continuous Drain Current (ID, Tc=25C) — 63 A
Continuous Drain Current (ID, Ta=25C) — 17 A
On-Resistance Rds(on) max @ VGS=10V, ID=31A — 5.8 mOhm
Gate Threshold Voltage VGS(th) typ — 3.4 V
Power Dissipation (TA=25C) — 3 W
Power Dissipation (TC=25C) — 42 W
RoHS Compliance — RoHS Compliant
MSL (Moisture Sensitivity Level) — MSL per JEDEC J-STD-020
Gate Drive Level — Normal Level (10V VGS recommended)

Datenblätter & Ressourcen

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