IPT067N20NM6ATMA1 vs ISC058N04NM5ATMA1 Comparación
Comparación detallada lado a lado de IPT067N20NM6ATMA1 por Infineon y ISC058N04NM5ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
ISC058N04NM5ATMA1 - 40V 63A 5.8mOhm OptiMOS 5 N-MOSFET | Infineon
ISC058N04NM5ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IPT067N20NM6ATMA1 | ISC058N04NM5ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $4,85 | $0,60 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 | OptiMOS 5 40V Normal Level |
| Tipo de transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 200 V | 40 V |
| Continuous Drain Current (ID) at TA=25C | 15.3 A | — |
| Continuous Drain Current (ID) at TC=25C | 137 A | — |
| Power Dissipation (PD) at TA=25C | 3.8 W | — |
| Power Dissipation (PD) at TC=25C | 300 W | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Encapsulado | PG-HSOF-8-1 (8-pin + exposed tab) | PG-TDSON-8 FL (SuperSO8 5x6 mm) |
| Rango de temperatura de funcionamiento | -55C to +150C (junction) | -55C to +175C |
| Technology | Trench-gate OptiMOS 6 silicon | OptiMOS 5 trench MOSFET |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: max VGS rating] | — |
| On-Resistance RDS(on) typ | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Gate Charge (Qg) typ | [DATA_NEEDED: total gate charge] | — |
| Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical value] | — |
| Estado RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Nivel MSL | [DATA_NEEDED: MSL moisture sensitivity level] | — |
| Configuration | Single N-channel | — |
| Continuous Drain Current (ID, Tc=25C) | — | 63 A |
| Continuous Drain Current (ID, Ta=25C) | — | 17 A |
| On-Resistance Rds(on) max @ VGS=10V, ID=31A | — | 5.8 mOhm |
| Gate Threshold Voltage VGS(th) typ | — | 3.4 V |
| Power Dissipation (TA=25C) | — | 3 W |
| Power Dissipation (TC=25C) | — | 42 W |
| RoHS Compliance | — | RoHS Compliant |
| MSL (Moisture Sensitivity Level) | — | MSL per JEDEC J-STD-020 |
| Gate Drive Level | — | Normal Level (10V VGS recommended) |