IPTC017N12NM6ATMA1 vs IGD08N120S7ATMA1 Vergleich

Detaillierter Direktvergleich von IPTC017N12NM6ATMA1 von Infineon und IGD08N120S7ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
IGD08N120S7ATMA1 IGD08N120S7ATMA1 - 1200V Trench Stop IGBT, 24A | Infineon

IGD08N120S7ATMA1 - 1200V Trench Stop IGBT, 24A | Infineon

IGD08N120S7ATMA1 ✓ Aktiv

Spezifikationsvergleich

Parameter IPTC017N12NM6ATMA1 IGD08N120S7ATMA1
Marke Infineon Infineon
Kategorie MOSFETs IGBTs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $3,95 $1,65
Technology OptiMOS 6, N-channel trench MOSFET Trench Field Stop, 7th generation
Drain-Source Voltage (VDS) 120 V —
Continuous Drain Current (ID, Ta) 32 A —
Continuous Drain Current (ID, Tc) 331 A —
On-State Resistance RDS(on) max 1.7 mΩ at VGS = 10 V —
Gate-Source Threshold VGS(th) 2.4 V (typ) —
Total Gate Charge QG 141 nC at VGS = 10 V —
Input Capacitance Ciss 2.4 nF at VDS = 60 V —
Output Capacitance Coss 11000 pF at VDS = 60 V —
Power Dissipation (Ta) 3.8 W —
Power Dissipation (Tc) 395 W —
Gehäuse PG-HDSOP-16 (Surface Mount) PG-TO252-3 (DPAK)
Montageart Surface Mount Surface Mount
Betriebstemperatur -55 °C to +175 °C (TJ max) —
Gate Drive Voltage (recommended) 10 V —
RoHS-Status Compliant Compliant
Manufacturer — Infineon Technologies
Product Family — IGBT 7 (S7) Trench Field Stop
Collector-Emitter Voltage (Vce max) — 1200 V
Continuous Collector Current (Ic, Tc=25C) — 24 A
Pulsed Collector Current (Icm) — [DATA_NEEDED: pulsed collector current]
Total Power Dissipation (Ptot) — 106 W
Gate-Emitter Voltage (Vge max) — [DATA_NEEDED: Vge max]
VCE(sat) at rated Ic — 1.65 V
Co-packaged Diode — Yes (anti-parallel emitter diode)
Betriebs-Sperrschichttemperatur — -40C to +175C (industry grade)
Configuration — Single

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