IPTC017N12NM6ATMA1 vs IGD08N120S7ATMA1 对比
详细并排对比 IPTC017N12NM6ATMA1 出自 Infineon 和 IGD08N120S7ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPTC017N12NM6ATMA1 | IGD08N120S7ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | IGBTs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $3.95 | $1.65 |
| Technology | OptiMOS 6, N-channel trench MOSFET | Trench Field Stop, 7th generation |
| Drain-Source Voltage (VDS) | 120 V | — |
| Continuous Drain Current (ID, Ta) | 32 A | — |
| Continuous Drain Current (ID, Tc) | 331 A | — |
| On-State Resistance RDS(on) max | 1.7 mΩ at VGS = 10 V | — |
| Gate-Source Threshold VGS(th) | 2.4 V (typ) | — |
| Total Gate Charge QG | 141 nC at VGS = 10 V | — |
| Input Capacitance Ciss | 2.4 nF at VDS = 60 V | — |
| Output Capacitance Coss | 11000 pF at VDS = 60 V | — |
| Power Dissipation (Ta) | 3.8 W | — |
| Power Dissipation (Tc) | 395 W | — |
| 封装 | PG-HDSOP-16 (Surface Mount) | PG-TO252-3 (DPAK) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | -55 °C to +175 °C (TJ max) | — |
| Gate Drive Voltage (recommended) | 10 V | — |
| RoHS 状态 | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | IGBT 7 (S7) Trench Field Stop |
| Collector-Emitter Voltage (Vce max) | — | 1200 V |
| Continuous Collector Current (Ic, Tc=25C) | — | 24 A |
| Pulsed Collector Current (Icm) | — | [DATA_NEEDED: pulsed collector current] |
| Total Power Dissipation (Ptot) | — | 106 W |
| Gate-Emitter Voltage (Vge max) | — | [DATA_NEEDED: Vge max] |
| VCE(sat) at rated Ic | — | 1.65 V |
| Co-packaged Diode | — | Yes (anti-parallel emitter diode) |
| 工作结温 | — | -40C to +175C (industry grade) |
| Configuration | — | Single |