IPTC017N12NM6ATMA1 vs IPT017N12NM6ATMA1 Vergleich
Detaillierter Direktvergleich von IPTC017N12NM6ATMA1 von Infineon und IPT017N12NM6ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPTC017N12NM6ATMA1 - 120V 1.7mΩ 331A OptiMOS 6 MOSFET | Infineon
IPTC017N12NM6ATMA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | IPTC017N12NM6ATMA1 | IPT017N12NM6ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $3,95 | $1,85 |
| Technology | OptiMOS 6, N-channel trench MOSFET | OptiMOS 6 |
| Drain-Source Voltage (VDS) | 120 V | 120 V |
| Continuous Drain Current (ID, Ta) | 32 A | — |
| Continuous Drain Current (ID, Tc) | 331 A | — |
| On-State Resistance RDS(on) max | 1.7 mΩ at VGS = 10 V | — |
| Gate-Source Threshold VGS(th) | 2.4 V (typ) | — |
| Total Gate Charge QG | 141 nC at VGS = 10 V | — |
| Input Capacitance Ciss | 2.4 nF at VDS = 60 V | — |
| Output Capacitance Coss | 11000 pF at VDS = 60 V | — |
| Power Dissipation (Ta) | 3.8 W | — |
| Power Dissipation (Tc) | 395 W | — |
| Gehäuse | PG-HDSOP-16 (Surface Mount) | PG-HSOF-8 (TOLL) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | -55 °C to +175 °C (TJ max) | -55C to +175C |
| Gate Drive Voltage (recommended) | 10 V | — |
| RoHS-Status | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IPT017N12NM6ATMA1 |
| Transistortyp | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Ta | — | 29 A |
| Continuous Drain Current (ID) at Tc | — | 331 A |
| On-Resistance RDS(on) max | — | 1.7 mOhm |
| Power Dissipation at Ta | — | 3 W |
| Power Dissipation at Tc | — | 395 W |
| Pin-Anzahl | — | 8 + tab |
| Packaging | — | Tape & Reel |