IPTC054N15NM5ATMA1 vs ISC015N06NM5ATMA1 Vergleich
Detaillierter Direktvergleich von IPTC054N15NM5ATMA1 von Infineon und ISC015N06NM5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPTC054N15NM5ATMA1 - 150V 143A 5.4mΩ OptiMOS 5 MOSFET | Infineon
IPTC054N15NM5ATMA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | IPTC054N15NM5ATMA1 | ISC015N06NM5ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,52 | $0,62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 (IPT family) | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID) at TA=25°C | 17.5 A | — |
| Continuous Drain Current (ID) at TC=25°C | 143 A | — |
| Power Dissipation (PD) at TA=25°C | 3.8 W | — |
| Power Dissipation (PD) at TC=25°C | 250 W | — |
| On-Resistance RDS(on) at VGS=10V, ID=50A | 5.4 mΩ | — |
| Gate-Source Voltage (VGS) max | 20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | — |
| Total Gate Charge (Qg) typical | 58 nC | — |
| Forward Body Diode Voltage (VSD) | 0.83 V | — |
| Betriebs-Sperrschichttemperatur | -55 °C to +175 °C | — |
| Gehäuse | PG-HDSOP-16-2 (16-pin top-cooled) | PG-TDSON-8 (PQFN 5x6) Drain-Down |
| Montageart | Surface Mount (top-side cooled) | Surface Mount |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| MSL-Level | [DATA_NEEDED: MSL rating] | — |
| Product Family | — | OptiMOS 5 |
| Polarity / Channel Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TA=25C | — | 33 A |
| Pulsed Drain Current (IDM) at TC=25C | — | 259 A |
| On-Resistance RDS(on) typical at VGS=10V | — | 1.5 mOhm |
| Total Power Dissipation (TA) | — | 3 W |
| Total Power Dissipation (TC) | — | 188 W |
| Betriebstemperaturbereich | — | -55 C to +175 C |
| Technology | — | Trench MOSFET (OptiMOS 5) |
| MSL (Moisture Sensitivity Level) | — | 1 |