IPTG025N15NM6ATMA1 vs IPT067N20NM6ATMA1 Vergleich

Detaillierter Direktvergleich von IPTG025N15NM6ATMA1 von Infineon und IPT067N20NM6ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IPTG025N15NM6ATMA1 IPT067N20NM6ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,52 $4,85
Manufacturer Infineon Technologies Infineon Technologies
Technology OptiMOS 6 150 V (N-channel trench) Trench-gate OptiMOS 6 silicon
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) 150 V 200 V
Continuous Drain Current (ID) at TA=25C 26 A 15.3 A
Continuous Drain Current (ID) at TC=25C 264 A (pulsed) 137 A
Power Dissipation (PD) at TA=25C 3.8 W 3.8 W
Power Dissipation (PD) at TC=25C 395 W 300 W
On-State Resistance RDS(on) typ 2.5 mOhm at VGS=10 V —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th) value] —
Total Gate Charge Qg typ [DATA_NEEDED: Qg value] —
Gehäuse PG-HSOG-8-1 (TOLG) PG-HSOF-8-1 (8-pin + exposed tab)
Montageart Surface Mount Surface Mount
Betriebstemperaturbereich -55 C to +175 C (typical for OptiMOS 6) -55C to +150C (junction)
RoHS-Status Compliant Compliant
MSL (Moisture Sensitivity Level) MSL1 (per JEDEC J-STD-020) —
Solder Joint Reliability Excellent - 30% smaller footprint than D2PAK —
Product Family — OptiMOS 6
Transistortyp — N-Channel MOSFET
Gate-Source Voltage (VGS) — [DATA_NEEDED: max VGS rating]
On-Resistance RDS(on) typ — [DATA_NEEDED: RDS(on) at VGS=10V]
Gate Charge (Qg) typ — [DATA_NEEDED: total gate charge]
Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typical value]
Lead-Free — Yes
MSL-Level — [DATA_NEEDED: MSL moisture sensitivity level]
Configuration — Single N-channel

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