IQDH29NE2LM5CGSCATMA1 vs IAUA220N08S5N021AUMA1 Vergleich

Detaillierter Direktvergleich von IQDH29NE2LM5CGSCATMA1 von Infineon und IAUA220N08S5N021AUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
IQDH29NE2LM5CGSCATMA1 IQDH29NE2LM5CGSCATMA1 - 25V N-Ch 0.29mΩ MOSFET | Infineon

IQDH29NE2LM5CGSCATMA1 - 25V N-Ch 0.29mΩ MOSFET | Infineon

IQDH29NE2LM5CGSCATMA1 ✓ Aktiv
Infineon
IAUA220N08S5N021AUMA1 IAUA220N08S5N021AUMA1 - 80V, 220A OptiMOS-5 N-MOSFET | Infineon

IAUA220N08S5N021AUMA1 - 80V, 220A OptiMOS-5 N-MOSFET | Infineon

IAUA220N08S5N021AUMA1 ✓ Aktiv

Spezifikationsvergleich

Parameter IQDH29NE2LM5CGSCATMA1 IAUA220N08S5N021AUMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,84 $2,45
FET Type N-Channel —
Technology OptiMOS 5 Power-Transistor OptiMOS-5 (75V-120V family)
Drain-Source Voltage (VDS) 25 V —
Continuous Drain Current (Ta) 75 A —
Continuous Drain Current (Tc) 789 A —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 278 W —
Maximum On-Resistance RDS(on) 0.29 mΩ —
Gate Threshold Voltage VGS(th) 2 V (typ) —
Gehäuse PG-WHTFN-9-U02 (WHTFN EP) PG-HSOF-5-4 (7x8 mm²)
Pin-Anzahl 9 —
Montageart Surface Mount Surface Mount
Cooling Dual-side exposed pad (top + bottom) —
MSL-Level [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL moisture sensitivity level]
RoHS-Status Compliant Compliant
Drain-Source Voltage (V_DS max) — 80 V
Continuous Drain Current (I_D, Tj) — 220 A
Static Drain-Source On-Resistance (R_DS(on)) — 2.1 mΩ at 10 V V_GS
Power Dissipation (P_D, Tc) — 211 W
Gate-Source Voltage (V_GS max) — [DATA_NEEDED: V_GS max absolute rating]
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) typical/min/max]
Betriebstemperaturbereich — -55C to +175C (Tj)
Channel Type — N-Channel
Automotive Qualification — AEC-Q101 qualified
Total Gate Charge (Q_g) — [DATA_NEEDED: Q_g typical at V_GS=10V]
Output Capacitance (C_oss) — [DATA_NEEDED: C_oss typical]
Thermal Resistance (R_thJC) — [DATA_NEEDED: junction-to-case thermal resistance]

Datenblätter & Ressourcen

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