IQDH29NE2LM5CGSCATMA1 vs IAUA220N08S5N021AUMA1 对比

详细并排对比 IQDH29NE2LM5CGSCATMA1 出自 Infineon 和 IAUA220N08S5N021AUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IQDH29NE2LM5CGSCATMA1 IQDH29NE2LM5CGSCATMA1 - 25V N-Ch 0.29mΩ MOSFET | Infineon

IQDH29NE2LM5CGSCATMA1 - 25V N-Ch 0.29mΩ MOSFET | Infineon

IQDH29NE2LM5CGSCATMA1 ✓ 量产中
Infineon
IAUA220N08S5N021AUMA1 IAUA220N08S5N021AUMA1 - 80V, 220A OptiMOS-5 N-MOSFET | Infineon

IAUA220N08S5N021AUMA1 - 80V, 220A OptiMOS-5 N-MOSFET | Infineon

IAUA220N08S5N021AUMA1 ✓ 量产中

规格对比

参数 IQDH29NE2LM5CGSCATMA1 IAUA220N08S5N021AUMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.84 $2.45
FET Type N-Channel —
Technology OptiMOS 5 Power-Transistor OptiMOS-5 (75V-120V family)
Drain-Source Voltage (VDS) 25 V —
Continuous Drain Current (Ta) 75 A —
Continuous Drain Current (Tc) 789 A —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 278 W —
Maximum On-Resistance RDS(on) 0.29 mΩ —
Gate Threshold Voltage VGS(th) 2 V (typ) —
封装 PG-WHTFN-9-U02 (WHTFN EP) PG-HSOF-5-4 (7x8 mm²)
引脚数量 9 —
安装类型 Surface Mount Surface Mount
Cooling Dual-side exposed pad (top + bottom) —
MSL 等级 [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL moisture sensitivity level]
RoHS 状态 Compliant Compliant
Drain-Source Voltage (V_DS max) — 80 V
Continuous Drain Current (I_D, Tj) — 220 A
Static Drain-Source On-Resistance (R_DS(on)) — 2.1 mΩ at 10 V V_GS
Power Dissipation (P_D, Tc) — 211 W
Gate-Source Voltage (V_GS max) — [DATA_NEEDED: V_GS max absolute rating]
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) typical/min/max]
工作温度范围 — -55C to +175C (Tj)
Channel Type — N-Channel
Automotive Qualification — AEC-Q101 qualified
Total Gate Charge (Q_g) — [DATA_NEEDED: Q_g typical at V_GS=10V]
Output Capacitance (C_oss) — [DATA_NEEDED: C_oss typical]
Thermal Resistance (R_thJC) — [DATA_NEEDED: junction-to-case thermal resistance]

数据手册与资源

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