IQDH29NE2LM5CGSCATMA1 vs IQDH35N03LM5SCATMA1 Vergleich
Detaillierter Direktvergleich von IQDH29NE2LM5CGSCATMA1 von Infineon und IQDH35N03LM5SCATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IQDH35N03LM5SCATMA1 - 30V 700A N-Ch OptiMOS 5 MOSFET | Infineon
IQDH35N03LM5SCATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IQDH29NE2LM5CGSCATMA1 | IQDH35N03LM5SCATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,84 | $2,05 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 Power-Transistor | OptiMOS 5 (trench, shielded-gate) |
| Drain-Source Voltage (VDS) | 25 V | — |
| Continuous Drain Current (Ta) | 75 A | — |
| Continuous Drain Current (Tc) | 789 A | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 278 W | — |
| Maximum On-Resistance RDS(on) | 0.29 mΩ | — |
| Gate Threshold Voltage VGS(th) | 2 V (typ) | — |
| Gehäuse | PG-WHTFN-9-U02 (WHTFN EP) | PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin) |
| Pin-Anzahl | 9 | — |
| Montageart | Surface Mount | Surface Mount |
| Cooling | Dual-side exposed pad (top + bottom) | — |
| MSL-Level | [DATA_NEEDED: MSL rating] | 1 (unlimited) |
| RoHS-Status | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Transistortyp | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) max | — | 30 V |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Continuous Drain Current (ID) at Ta | — | 66 A |
| Pulsed Drain Current (IDM) at Tc | — | 700 A |
| On-State Resistance (RDS(on)) max | — | 0.35 mOhm @ VGS=10V |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 278 W |
| Betriebstemperaturbereich | — | -55 C to +175 C |
| Marking | — | IQDH35N03LM5S |