IQDH35N03LM5CGATMA1 vs IQE036N08NM6CGSCATMA1 Vergleich

Detaillierter Direktvergleich von IQDH35N03LM5CGATMA1 von Infineon und IQE036N08NM6CGSCATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
IQE036N08NM6CGSCATMA1 IQE036N08NM6CGSCATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon

IQE036N08NM6CGSCATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon

IQE036N08NM6CGSCATMA1 ✓ Aktiv

Spezifikationsvergleich

Parameter IQDH35N03LM5CGATMA1 IQE036N08NM6CGSCATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,45 $0,88
Drain-to-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at Ta 66 A —
Pulsed Drain Current (IDM) at Tc 700 A —
Gate-to-Source Voltage (VGS) max ±20 V —
Static Drain-to-Source On-Resistance (RDS(on)) 0.35 mΩ (typical at VGS=10 V) —
Power Dissipation (PD) at Ta 2.5 W —
Power Dissipation (PD) at Tc 278 W —
Betriebstemperaturbereich -55 °C to +175 °C -55 C to +150 C (junction, per datasheet derating curves)
Gehäuse PG-TTFN-9-U02 (PQFN 5x6 mm²) —
Montageart Surface Mount Surface Mount
MSL-Level 1 —
RoHS-Status Compliant Compliant
Halogenfrei Yes —
Channel Type N-Channel —
Technology OptiMOS 5 trench MOSFET Trench MOSFET (OptiMOS 6)
Manufacturer — Infineon Technologies
Series — OptiMOS 6
Part Status — Active
FET Type — N-Channel
Drain-Source Voltage (VDS) — 80 V
Continuous Drain Current (ID) at TA — 16.7 A
Continuous Drain Current (ID) at TC — 118 A
Power Dissipation (PD) at TA — 2.5 W
Power Dissipation (PD) at TC — 125 W
Gehäuse / Bauform — PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm)
Configuration — Source Down, Center Gate, Dual-Side Cooling
Packing — Tape and Reel (suffix ATMA1)
Voltage Rating — 60 V to 100 V category (80 V nominal)

Datenblätter & Ressourcen

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